Abstract
Using a combination of chemical etching and thermal annealing methods, we have obtained atomically flat TiO 2-terminated SrTiO 2(001) with large terraces. The average width of the terrace is only determined by miscut angles. When we continuously grow tens of SrTiO 3 monolayers on such a surface under pulsed Jaser ablation deposition condition at 621°C, the growth proceeds in a layer-by-layer mode characterized by un-damped oscillations of the specular RHEED intensity. After the growth of 180 monolayers, the surface morphology is restored to the pre-growth condition with similarly large terraces after annealing in vacuum for only 30 min, indicating efficient mass transfer on TiO 2-terminated terraces.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1002-1005 |
| Number of pages | 4 |
| Journal | Chinese Physics Letters |
| Volume | 22 |
| Issue number | 4 |
| DOIs | |
| State | Published - Apr 2005 |
ASJC Scopus subject areas
- Physics and Astronomy(all)
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Fei, Y. Y., Wang, X., Lu, H. B., Yang, G. Z., & Zhu, X. D. (2005). Unit-cell by unit-cell homoepitaxial growth using atomically flat SrTiO 3(001) substrates and pulsed laser deposition. Chinese Physics Letters, 22(4), 1002-1005. https://doi.org/10.1088/0256-307X/22/4/062