Unit-cell by unit-cell homoepitaxial growth using atomically flat SrTiO 3(001) substrates and pulsed laser deposition

Yi Yan Fei, Xu Wang, Hui Bin Lu, Guo Zhen Yang, Xiang Dong Zhu

Research output: Contribution to journalArticle

Abstract

Using a combination of chemical etching and thermal annealing methods, we have obtained atomically flat TiO 2-terminated SrTiO 2(001) with large terraces. The average width of the terrace is only determined by miscut angles. When we continuously grow tens of SrTiO 3 monolayers on such a surface under pulsed Jaser ablation deposition condition at 621°C, the growth proceeds in a layer-by-layer mode characterized by un-damped oscillations of the specular RHEED intensity. After the growth of 180 monolayers, the surface morphology is restored to the pre-growth condition with similarly large terraces after annealing in vacuum for only 30 min, indicating efficient mass transfer on TiO 2-terminated terraces.

Original languageEnglish (US)
Pages (from-to)1002-1005
Number of pages4
JournalChinese Physics Letters
Volume22
Issue number4
DOIs
StatePublished - Apr 2005

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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