Unit-cell by unit-cell homoepitaxial growth using atomically flat SrTiO 3(001) substrates and pulsed laser deposition

Yi Yan Fei, Xu Wang, Hui Bin Lu, Guo Zhen Yang, Xiang Dong Zhu

Research output: Contribution to journalArticle

Abstract

Using a combination of chemical etching and thermal annealing methods, we have obtained atomically flat TiO 2-terminated SrTiO 2(001) with large terraces. The average width of the terrace is only determined by miscut angles. When we continuously grow tens of SrTiO 3 monolayers on such a surface under pulsed Jaser ablation deposition condition at 621°C, the growth proceeds in a layer-by-layer mode characterized by un-damped oscillations of the specular RHEED intensity. After the growth of 180 monolayers, the surface morphology is restored to the pre-growth condition with similarly large terraces after annealing in vacuum for only 30 min, indicating efficient mass transfer on TiO 2-terminated terraces.

Original languageEnglish (US)
Pages (from-to)1002-1005
Number of pages4
JournalChinese Physics Letters
Volume22
Issue number4
DOIs
StatePublished - Apr 2005

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pulsed laser deposition
cells
lasers
annealing
ablation
mass transfer
etching
vacuum
oscillations

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  • Physics and Astronomy(all)

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Unit-cell by unit-cell homoepitaxial growth using atomically flat SrTiO 3(001) substrates and pulsed laser deposition. / Fei, Yi Yan; Wang, Xu; Lu, Hui Bin; Yang, Guo Zhen; Zhu, Xiang Dong.

In: Chinese Physics Letters, Vol. 22, No. 4, 04.2005, p. 1002-1005.

Research output: Contribution to journalArticle

Fei, Yi Yan ; Wang, Xu ; Lu, Hui Bin ; Yang, Guo Zhen ; Zhu, Xiang Dong. / Unit-cell by unit-cell homoepitaxial growth using atomically flat SrTiO 3(001) substrates and pulsed laser deposition. In: Chinese Physics Letters. 2005 ; Vol. 22, No. 4. pp. 1002-1005.
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