Abstract
Thin film contraction under external mechanical stress can be used to miniaturize size and increase density of patterned features on top. Nonlinear Finite Element Analysis is used to provide guidance on this contraction process. It was found that the substrate contraction causes stress accumulation along interfaces between protruded features and substrate. These stress accumulation complexes the control of profile changes on patterned features and suggest a design of patterned features arranged beyond a critical distance to avoid cross-interference.
| Original language | English (US) |
|---|---|
| Title of host publication | Materials Research Society Symposium Proceedings |
| Pages | 36-41 |
| Number of pages | 6 |
| Volume | 921 |
| State | Published - 2006 |
| Event | 2006 MRS Spring Meeting - San Francisco, CA, United States Duration: Apr 17 2006 → Apr 21 2006 |
Other
| Other | 2006 MRS Spring Meeting |
|---|---|
| Country | United States |
| City | San Francisco, CA |
| Period | 4/17/06 → 4/21/06 |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
Cite this
Understanding and control of lateral contraction in stamping lithography. / Li, Zheng; Tan, Li; Liu, Gang-yu.
Materials Research Society Symposium Proceedings. Vol. 921 2006. p. 36-41.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Understanding and control of lateral contraction in stamping lithography
AU - Li, Zheng
AU - Tan, Li
AU - Liu, Gang-yu
PY - 2006
Y1 - 2006
N2 - Thin film contraction under external mechanical stress can be used to miniaturize size and increase density of patterned features on top. Nonlinear Finite Element Analysis is used to provide guidance on this contraction process. It was found that the substrate contraction causes stress accumulation along interfaces between protruded features and substrate. These stress accumulation complexes the control of profile changes on patterned features and suggest a design of patterned features arranged beyond a critical distance to avoid cross-interference.
AB - Thin film contraction under external mechanical stress can be used to miniaturize size and increase density of patterned features on top. Nonlinear Finite Element Analysis is used to provide guidance on this contraction process. It was found that the substrate contraction causes stress accumulation along interfaces between protruded features and substrate. These stress accumulation complexes the control of profile changes on patterned features and suggest a design of patterned features arranged beyond a critical distance to avoid cross-interference.
UR - http://www.scopus.com/inward/record.url?scp=33947647852&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33947647852&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:33947647852
SN - 1558998780
SN - 9781558998780
VL - 921
SP - 36
EP - 41
BT - Materials Research Society Symposium Proceedings
ER -