Abstract
Thin film contraction under external mechanical stress can be used to miniaturize size and increase density of patterned features on top. Nonlinear Finite Element Analysis is used to provide guidance on this contraction process. It was found that the substrate contraction causes stress accumulation along interfaces between protruded features and substrate. These stress accumulation complexes the control of profile changes on patterned features and suggest a design of patterned features arranged beyond a critical distance to avoid cross-interference.
| Original language | English (US) |
|---|---|
| Title of host publication | Materials Research Society Symposium Proceedings |
| Pages | 36-41 |
| Number of pages | 6 |
| Volume | 921 |
| State | Published - 2006 |
| Event | 2006 MRS Spring Meeting - San Francisco, CA, United States Duration: Apr 17 2006 → Apr 21 2006 |
Other
| Other | 2006 MRS Spring Meeting |
|---|---|
| Country | United States |
| City | San Francisco, CA |
| Period | 4/17/06 → 4/21/06 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials