Synthesis of gallium nitride quantum dots through reactive laser ablation

Timothy J. Goodwin, Valerie J. Leppert, Subhash H. Risbud, Ian M. Kennedy, Howard W H Lee

Research output: Contribution to journalArticle

71 Scopus citations

Abstract

Nanocrystalline GaN was synthesized through reactive laser ablation of gallium metal in a N2 atmosphere. X-ray diffraction, selected-area electron diffraction, and transmission electron microscopy measurements show that the GaN crystallites are as small as 2 nm in diameter, and follow a log-normal size distribution with a mean particle diameter of 12 nm. Size-selective photoluminescence and photoluminescence excitation spectroscopy reveal a continuous range of blueshifted band-edge emissions and absorptions starting from the bulk value for gallium nitride and continuing to below 300 nm. These results are consistent with a GaN particle size distribution that . encompasses regions above and below the excitonic-Bohr radius of GaN, such that the GaN material shows combined bulk and quantum confined optical properties.

Original languageEnglish (US)
Pages (from-to)3122-3124
Number of pages3
JournalApplied Physics Letters
Volume70
Issue number23
StatePublished - Jun 9 1997

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Goodwin, T. J., Leppert, V. J., Risbud, S. H., Kennedy, I. M., & Lee, H. W. H. (1997). Synthesis of gallium nitride quantum dots through reactive laser ablation. Applied Physics Letters, 70(23), 3122-3124.