Abstract
Nanocrystalline GaN was synthesized through reactive laser ablation of gallium metal in a N2 atmosphere. X-ray diffraction, selected-area electron diffraction, and transmission electron microscopy measurements show that the GaN crystallites are as small as 2 nm in diameter, and follow a log-normal size distribution with a mean particle diameter of 12 nm. Size-selective photoluminescence and photoluminescence excitation spectroscopy reveal a continuous range of blueshifted band-edge emissions and absorptions starting from the bulk value for gallium nitride and continuing to below 300 nm. These results are consistent with a GaN particle size distribution that . encompasses regions above and below the excitonic-Bohr radius of GaN, such that the GaN material shows combined bulk and quantum confined optical properties.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 3122-3124 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 70 |
| Issue number | 23 |
| State | Published - Jun 9 1997 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Synthesis of gallium nitride quantum dots through reactive laser ablation. / Goodwin, Timothy J.; Leppert, Valerie J.; Risbud, Subhash H.; Kennedy, Ian M.; Lee, Howard W H.
In: Applied Physics Letters, Vol. 70, No. 23, 09.06.1997, p. 3122-3124.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Synthesis of gallium nitride quantum dots through reactive laser ablation
AU - Goodwin, Timothy J.
AU - Leppert, Valerie J.
AU - Risbud, Subhash H.
AU - Kennedy, Ian M.
AU - Lee, Howard W H
PY - 1997/6/9
Y1 - 1997/6/9
N2 - Nanocrystalline GaN was synthesized through reactive laser ablation of gallium metal in a N2 atmosphere. X-ray diffraction, selected-area electron diffraction, and transmission electron microscopy measurements show that the GaN crystallites are as small as 2 nm in diameter, and follow a log-normal size distribution with a mean particle diameter of 12 nm. Size-selective photoluminescence and photoluminescence excitation spectroscopy reveal a continuous range of blueshifted band-edge emissions and absorptions starting from the bulk value for gallium nitride and continuing to below 300 nm. These results are consistent with a GaN particle size distribution that . encompasses regions above and below the excitonic-Bohr radius of GaN, such that the GaN material shows combined bulk and quantum confined optical properties.
AB - Nanocrystalline GaN was synthesized through reactive laser ablation of gallium metal in a N2 atmosphere. X-ray diffraction, selected-area electron diffraction, and transmission electron microscopy measurements show that the GaN crystallites are as small as 2 nm in diameter, and follow a log-normal size distribution with a mean particle diameter of 12 nm. Size-selective photoluminescence and photoluminescence excitation spectroscopy reveal a continuous range of blueshifted band-edge emissions and absorptions starting from the bulk value for gallium nitride and continuing to below 300 nm. These results are consistent with a GaN particle size distribution that . encompasses regions above and below the excitonic-Bohr radius of GaN, such that the GaN material shows combined bulk and quantum confined optical properties.
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M3 - Article
VL - 70
SP - 3122
EP - 3124
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 23
ER -