Abstract
Nanocrystalline GaN was synthesized through reactive laser ablation of gallium metal in a N2 atmosphere. X-ray diffraction, selected-area electron diffraction, and transmission electron microscopy measurements show that the GaN crystallites are as small as 2 nm in diameter, and follow a log-normal size distribution with a mean particle diameter of 12 nm. Size-selective photoluminescence and photoluminescence excitation spectroscopy reveal a continuous range of blueshifted band-edge emissions and absorptions starting from the bulk value for gallium nitride and continuing to below 300 nm. These results are consistent with a GaN particle size distribution that . encompasses regions above and below the excitonic-Bohr radius of GaN, such that the GaN material shows combined bulk and quantum confined optical properties.
Original language | English (US) |
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Pages (from-to) | 3122-3124 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 70 |
Issue number | 23 |
State | Published - Jun 9 1997 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)