Synthesis and characterization of P-doped amorphous and nanocrystalline Si

Jialing Wang, Shreyashi Ganguly, Sabyasachi Sen, Nigel D. Browning, Susan M. Kauzlarich

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Intentional impurity doping lies at the heart of the silicon technology. The dopants provide electrons or holes as necessary carriers of the electron current and can significantly modify the electric, optical and magnetic properties of the semiconductors. P-doped amorphous Si (a-Si) was prepared by a solid state and solution metathesis reaction of a P-doped Zintl phase precursor, NaSi0.99P0.01, with an excess of NH4X (X = Br, I). After the salt byproduct was removed from the solid state reaction, the a-Si material was annealed at 600 °C under vacuum for 2 h, resulting in P-doped nanocrystalline Si (nc-Si) material embedded in a-Si matrix. The product from the solution reaction also shows a combination of nc-Si embedded in a-Si; however, it was fully converted to nc-Si after annealing under argon at 650 °C for 30 min. Powder X-ray diffraction (XRD) and high resolution transmission electron microscopy (HRTEM) show the amorphous nature of the P-doped Si material before the annealing and the nanocrystallinity after the annealing. Fourier Transform Infrared (FTIR) spectroscopy shows that the P-doped Si material surface is partially capped by H and O or with solvent. Electron microprobe wavelength dispersive spectroscopy (WDS) as well as energy dispersive spectroscopy (EDS) confirm the presence of P in the Si material. 29Si and 31P solid state magic-angle-spinning nuclear magnetic resonance (MAS NMR) spectroscopy data provide the evidence of P doping into the Si structure with the P concentration of approximately 0.07 at.%.

Original languageEnglish (US)
Pages (from-to)156-161
Number of pages6
JournalPolyhedron
Volume58
DOIs
StatePublished - 2013

Fingerprint

solid state
annealing
synthesis
Doping (additives)
Annealing
electrons
metathesis
amorphous materials
magnetic resonance spectroscopy
Electrons
metal spinning
spectroscopy
Wavelength dispersive spectroscopy
nanocrystals
solid solutions
infrared spectroscopy
argon
Magic angle spinning
Argon
magnetic properties

Keywords

  • Amorphous silicon
  • Metathesis
  • Nanocrystalline silicon
  • Nanomaterials
  • Nanoparticles
  • NaSi
  • Silicide
  • Silicon
  • Zintl phase

ASJC Scopus subject areas

  • Inorganic Chemistry
  • Materials Chemistry
  • Physical and Theoretical Chemistry

Cite this

Wang, J., Ganguly, S., Sen, S., Browning, N. D., & Kauzlarich, S. M. (2013). Synthesis and characterization of P-doped amorphous and nanocrystalline Si. Polyhedron, 58, 156-161. https://doi.org/10.1016/j.poly.2012.10.011

Synthesis and characterization of P-doped amorphous and nanocrystalline Si. / Wang, Jialing; Ganguly, Shreyashi; Sen, Sabyasachi; Browning, Nigel D.; Kauzlarich, Susan M.

In: Polyhedron, Vol. 58, 2013, p. 156-161.

Research output: Contribution to journalArticle

Wang, J, Ganguly, S, Sen, S, Browning, ND & Kauzlarich, SM 2013, 'Synthesis and characterization of P-doped amorphous and nanocrystalline Si', Polyhedron, vol. 58, pp. 156-161. https://doi.org/10.1016/j.poly.2012.10.011
Wang, Jialing ; Ganguly, Shreyashi ; Sen, Sabyasachi ; Browning, Nigel D. ; Kauzlarich, Susan M. / Synthesis and characterization of P-doped amorphous and nanocrystalline Si. In: Polyhedron. 2013 ; Vol. 58. pp. 156-161.
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