Surface segregation of bulk oxygen on oxidation of epitaxially grown Nb-doped SrTiO3 on SrTiO3(001)

Fan Chen, Tong Zhao, Y. Y. Fei, Huibin Lu, Zhenghao Chen, Guozhen Yang, X. D. Zhu

Research output: Contribution to journalArticle

27 Scopus citations

Abstract

We studied the epitaxy of 10 mol% Nb:SrTiO3 on a SrTiO 3(100) substrate under an interrupted pulsed-laser-deposition condition. By monitoring the recovery behaviors of reflection high-energy electron diffraction intensity and an optical reflectance difference signal from the growth surface, we observed that, at temperatures above 630°C, the oxidation of an as-deposited Nb:SrTiO3 monolayer was achieved by the diffusion of oxygen vacancies in the monolayer into the substrate.

Original languageEnglish (US)
Pages (from-to)2889-2891
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number16
DOIs
StatePublished - Apr 22 2002

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Chen, F., Zhao, T., Fei, Y. Y., Lu, H., Chen, Z., Yang, G., & Zhu, X. D. (2002). Surface segregation of bulk oxygen on oxidation of epitaxially grown Nb-doped SrTiO3 on SrTiO3(001). Applied Physics Letters, 80(16), 2889-2891. https://doi.org/10.1063/1.1473694