Sub-10 nm lithography with self-assembled monolayers

M. J. Lercel, H. G. Craighead, A. N. Parikh, K. Seshadri, D. L. Allara

Research output: Contribution to journalArticle

176 Scopus citations

Abstract

Dots demonstrating critical resist dimensions of approximately 5 to 6 nm were formed in an octadecylsiloxane monolayer on silicon by electron beam exposure using a digital scanning electron microscope at 20 keV beam energy. The patterned dots were observed by imaging with an atomic force microscope (AFM). The electron beam size was measured to confirm that it is not the limiting factor in the exposure resolution. The limit that prevents the observation of smaller structures is either the small contrast in the AFM imaging for smaller dots or an intrinsic material limit caused by the secondary electron range.

Original languageEnglish (US)
Pages (from-to)1504-1506
Number of pages3
JournalApplied Physics Letters
Volume68
Issue number11
DOIs
StatePublished - 1996
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Lercel, M. J., Craighead, H. G., Parikh, A. N., Seshadri, K., & Allara, D. L. (1996). Sub-10 nm lithography with self-assembled monolayers. Applied Physics Letters, 68(11), 1504-1506. https://doi.org/10.1063/1.115680