Sub-10 nm lithography with self-assembled monolayers

M. J. Lercel, H. G. Craighead, A. N. Parikh, K. Seshadri, D. L. Allara

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Dots demonstrating critical resist dimensions of approximately 5 to 6 nm were formed in an octadecylsiloxane monolayer on silicon by electron beam exposure using a digital scanning electron microscope at 20 keV beam energy. The patterned dots were observed by imaging with an atomic force microscope (AFM). The electron beam size was measured to confirm that it is not the limiting factor in the exposure resolution. The limit that prevents the observation of smaller structures is either the small contrast in the AFM imaging for smaller dots or an intrinsic material limit caused by the secondary electron range.

Original languageEnglish (US)
Pages (from-to)1504
Number of pages1
JournalApplied Physics Letters
StatePublished - 1995
Externally publishedYes

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lithography
microscopes
electron beams
electron microscopes
scanning
silicon
electrons
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Lercel, M. J., Craighead, H. G., Parikh, A. N., Seshadri, K., & Allara, D. L. (1995). Sub-10 nm lithography with self-assembled monolayers. Applied Physics Letters, 1504.

Sub-10 nm lithography with self-assembled monolayers. / Lercel, M. J.; Craighead, H. G.; Parikh, A. N.; Seshadri, K.; Allara, D. L.

In: Applied Physics Letters, 1995, p. 1504.

Research output: Contribution to journalArticle

Lercel, MJ, Craighead, HG, Parikh, AN, Seshadri, K & Allara, DL 1995, 'Sub-10 nm lithography with self-assembled monolayers', Applied Physics Letters, pp. 1504.
Lercel MJ, Craighead HG, Parikh AN, Seshadri K, Allara DL. Sub-10 nm lithography with self-assembled monolayers. Applied Physics Letters. 1995;1504.
Lercel, M. J. ; Craighead, H. G. ; Parikh, A. N. ; Seshadri, K. ; Allara, D. L. / Sub-10 nm lithography with self-assembled monolayers. In: Applied Physics Letters. 1995 ; pp. 1504.
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