Sequential formation of ion pairs during activation of a sodium channel voltage sensor

Paul G. DeCaen, Vladimir Yarov-Yarovoy, Elizabeth M. Sharp, Todd Scheuer, William A. Catterall

Research output: Contribution to journalArticle

101 Citations (Scopus)

Abstract

Electrical signaling in biology depends upon a unique electromechanical transduction process mediated by the S4 segments of voltage-gated ion channels. These transmembrane segments are driven outward by the force of the electric field on positively charged amino acid residues termed "gating charges," which are positioned at three-residue intervals in the S4 transmembrane segment, and this movement is coupled to opening of the pore. Here, we use the disulfide-locking method to demonstrate sequential ion pair formation between the fourth gating charge in the S4 segment (R4) and two acidic residues in the S2 segment during activation. R4 interacts first with E70 at the intracellular end of the S2 segment and then with D60 near the extracellular end. Analysis with the Rosetta Membrane method reveals the 3-D structures of the gating pore as these ion pairs are formed sequentially to catalyze the S4 transmembrane movement required for voltagedependent activation. Our results directly demonstrate sequential ion pair formation that is an essential feature of the sliding helix model of voltage sensor function but is not compatible with the other widely discussed gating models.

Original languageEnglish (US)
Pages (from-to)22498-22503
Number of pages6
JournalProceedings of the National Academy of Sciences of the United States of America
Volume106
Issue number52
DOIs
StatePublished - Dec 19 2009
Externally publishedYes

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Sodium Channels
Ions
Ion Channels
Disulfides
Amino Acids
Membranes

Keywords

  • Electrical excitability
  • Gating

ASJC Scopus subject areas

  • General

Cite this

Sequential formation of ion pairs during activation of a sodium channel voltage sensor. / DeCaen, Paul G.; Yarov-Yarovoy, Vladimir; Sharp, Elizabeth M.; Scheuer, Todd; Catterall, William A.

In: Proceedings of the National Academy of Sciences of the United States of America, Vol. 106, No. 52, 19.12.2009, p. 22498-22503.

Research output: Contribution to journalArticle

DeCaen, Paul G. ; Yarov-Yarovoy, Vladimir ; Sharp, Elizabeth M. ; Scheuer, Todd ; Catterall, William A. / Sequential formation of ion pairs during activation of a sodium channel voltage sensor. In: Proceedings of the National Academy of Sciences of the United States of America. 2009 ; Vol. 106, No. 52. pp. 22498-22503.
@article{33c197d68d4247418cc9468919a85ae3,
title = "Sequential formation of ion pairs during activation of a sodium channel voltage sensor",
abstract = "Electrical signaling in biology depends upon a unique electromechanical transduction process mediated by the S4 segments of voltage-gated ion channels. These transmembrane segments are driven outward by the force of the electric field on positively charged amino acid residues termed {"}gating charges,{"} which are positioned at three-residue intervals in the S4 transmembrane segment, and this movement is coupled to opening of the pore. Here, we use the disulfide-locking method to demonstrate sequential ion pair formation between the fourth gating charge in the S4 segment (R4) and two acidic residues in the S2 segment during activation. R4 interacts first with E70 at the intracellular end of the S2 segment and then with D60 near the extracellular end. Analysis with the Rosetta Membrane method reveals the 3-D structures of the gating pore as these ion pairs are formed sequentially to catalyze the S4 transmembrane movement required for voltagedependent activation. Our results directly demonstrate sequential ion pair formation that is an essential feature of the sliding helix model of voltage sensor function but is not compatible with the other widely discussed gating models.",
keywords = "Electrical excitability, Gating",
author = "DeCaen, {Paul G.} and Vladimir Yarov-Yarovoy and Sharp, {Elizabeth M.} and Todd Scheuer and Catterall, {William A.}",
year = "2009",
month = "12",
day = "19",
doi = "10.1073/pnas.0912307106",
language = "English (US)",
volume = "106",
pages = "22498--22503",
journal = "Proceedings of the National Academy of Sciences of the United States of America",
issn = "0027-8424",
number = "52",

}

TY - JOUR

T1 - Sequential formation of ion pairs during activation of a sodium channel voltage sensor

AU - DeCaen, Paul G.

AU - Yarov-Yarovoy, Vladimir

AU - Sharp, Elizabeth M.

AU - Scheuer, Todd

AU - Catterall, William A.

PY - 2009/12/19

Y1 - 2009/12/19

N2 - Electrical signaling in biology depends upon a unique electromechanical transduction process mediated by the S4 segments of voltage-gated ion channels. These transmembrane segments are driven outward by the force of the electric field on positively charged amino acid residues termed "gating charges," which are positioned at three-residue intervals in the S4 transmembrane segment, and this movement is coupled to opening of the pore. Here, we use the disulfide-locking method to demonstrate sequential ion pair formation between the fourth gating charge in the S4 segment (R4) and two acidic residues in the S2 segment during activation. R4 interacts first with E70 at the intracellular end of the S2 segment and then with D60 near the extracellular end. Analysis with the Rosetta Membrane method reveals the 3-D structures of the gating pore as these ion pairs are formed sequentially to catalyze the S4 transmembrane movement required for voltagedependent activation. Our results directly demonstrate sequential ion pair formation that is an essential feature of the sliding helix model of voltage sensor function but is not compatible with the other widely discussed gating models.

AB - Electrical signaling in biology depends upon a unique electromechanical transduction process mediated by the S4 segments of voltage-gated ion channels. These transmembrane segments are driven outward by the force of the electric field on positively charged amino acid residues termed "gating charges," which are positioned at three-residue intervals in the S4 transmembrane segment, and this movement is coupled to opening of the pore. Here, we use the disulfide-locking method to demonstrate sequential ion pair formation between the fourth gating charge in the S4 segment (R4) and two acidic residues in the S2 segment during activation. R4 interacts first with E70 at the intracellular end of the S2 segment and then with D60 near the extracellular end. Analysis with the Rosetta Membrane method reveals the 3-D structures of the gating pore as these ion pairs are formed sequentially to catalyze the S4 transmembrane movement required for voltagedependent activation. Our results directly demonstrate sequential ion pair formation that is an essential feature of the sliding helix model of voltage sensor function but is not compatible with the other widely discussed gating models.

KW - Electrical excitability

KW - Gating

UR - http://www.scopus.com/inward/record.url?scp=76049115811&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=76049115811&partnerID=8YFLogxK

U2 - 10.1073/pnas.0912307106

DO - 10.1073/pnas.0912307106

M3 - Article

C2 - 20007787

AN - SCOPUS:76049115811

VL - 106

SP - 22498

EP - 22503

JO - Proceedings of the National Academy of Sciences of the United States of America

JF - Proceedings of the National Academy of Sciences of the United States of America

SN - 0027-8424

IS - 52

ER -