Abstract
Rigorous simulation, which in concept is nearly linear in CPU time with microampere beam currents, has been developed for analyzing statistical electron-electron interactions in lens free regions joined by ideal lenses and apertures. The simulation method is based on combining fast multipole acceleration (FMA) with modifications to a message passing interface for use on a multiprocessor and on a network of workstations. As test cases, the distribution of scattered electrons versus deviation from focus is given as well as results for the interaction between simultaneously imaged spots. The performance improvement per level of spatial division was only about a factor of 2 instead of the expected factor of 8 due to the pencil shape nature of the beam. A FMA method that is adaptable to beam density and geometry is needed. It is projected that it will be possible to simulate a 30 μA beam current on a quad-Pentium Pro machine in half a day and in matter of hour on a network of workstations.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 3221-3226 |
| Number of pages | 6 |
| Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
| Volume | 16 |
| Issue number | 6 |
| State | Published - Nov 1998 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Physics and Astronomy (miscellaneous)
- Surfaces and Interfaces
Cite this
Rigorous simulation of statistical electron-electron interactions with fast multipole acceleration and a network of workstations. / Wen, Victor S H; Carmichael, Owen T.; Yamashita, Hiroshi; Neureuther, Andrew R.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 16, No. 6, 11.1998, p. 3221-3226.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Rigorous simulation of statistical electron-electron interactions with fast multipole acceleration and a network of workstations
AU - Wen, Victor S H
AU - Carmichael, Owen T.
AU - Yamashita, Hiroshi
AU - Neureuther, Andrew R.
PY - 1998/11
Y1 - 1998/11
N2 - Rigorous simulation, which in concept is nearly linear in CPU time with microampere beam currents, has been developed for analyzing statistical electron-electron interactions in lens free regions joined by ideal lenses and apertures. The simulation method is based on combining fast multipole acceleration (FMA) with modifications to a message passing interface for use on a multiprocessor and on a network of workstations. As test cases, the distribution of scattered electrons versus deviation from focus is given as well as results for the interaction between simultaneously imaged spots. The performance improvement per level of spatial division was only about a factor of 2 instead of the expected factor of 8 due to the pencil shape nature of the beam. A FMA method that is adaptable to beam density and geometry is needed. It is projected that it will be possible to simulate a 30 μA beam current on a quad-Pentium Pro machine in half a day and in matter of hour on a network of workstations.
AB - Rigorous simulation, which in concept is nearly linear in CPU time with microampere beam currents, has been developed for analyzing statistical electron-electron interactions in lens free regions joined by ideal lenses and apertures. The simulation method is based on combining fast multipole acceleration (FMA) with modifications to a message passing interface for use on a multiprocessor and on a network of workstations. As test cases, the distribution of scattered electrons versus deviation from focus is given as well as results for the interaction between simultaneously imaged spots. The performance improvement per level of spatial division was only about a factor of 2 instead of the expected factor of 8 due to the pencil shape nature of the beam. A FMA method that is adaptable to beam density and geometry is needed. It is projected that it will be possible to simulate a 30 μA beam current on a quad-Pentium Pro machine in half a day and in matter of hour on a network of workstations.
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UR - http://www.scopus.com/inward/citedby.url?scp=4444330859&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:4444330859
VL - 16
SP - 3221
EP - 3226
JO - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
JF - Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena
SN - 1071-1023
IS - 6
ER -