Abstract
Gold-silver alloy films deposited on silicon wafers were annealed at temperatures between 100°C and 400°C, and subsequently dealloyed. The grain morphology and stress-state evolution of the samples before and after dealloying were studied by scanning electron microscopy and wafer curvature measurements. The residual stress in alloy films was augmented through thermal treatment; however, the subsequent dealloying step mitigated the residual stress without introducing significant changes in pore morphology. Possible mechanisms for stress and morphology evolution are reported.
Original language | English (US) |
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Title of host publication | ECS Transactions - Stress Related Phenomena in Electrochemical Systems |
Pages | 43-48 |
Number of pages | 6 |
Volume | 11 |
Edition | 24 |
DOIs | |
State | Published - Dec 24 2008 |
Externally published | Yes |
Event | Stress Related Phenomena in Electrochemical Systems - 212th ECS Meeting - Washington, DC, United States Duration: Oct 7 2007 → Oct 12 2007 |
Other
Other | Stress Related Phenomena in Electrochemical Systems - 212th ECS Meeting |
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Country/Territory | United States |
City | Washington, DC |
Period | 10/7/07 → 10/12/07 |
ASJC Scopus subject areas
- Engineering(all)