Quantum dot Ge/TiO2 heterojunction photoconductor fabrication and performance

Carena P. Church, Elayaraja Muthuswamy, Guangmei Zhai, Susan M. Kauzlarich, Sue A. Carter

Research output: Contribution to journalArticlepeer-review

23 Scopus citations

Abstract

Spun cast TiO2-Ge quantum dot (QD) heterojunction type photodetectors have been fabricated and characterized, with interest paid to photocurrent enhancements related to device design. Performance as a function of absorber layer thickness, QD size, and back contact is investigated. We have achieved ultra-thin (∼200 nm) devices with photocurrents at 0.5 V of 10 -4 A cm-2 while the thickest devices have photocurrents at 0.5 V of 10-2 A cm- 2 with on-off ratios >100, which represents 5 orders of magnitude increase in photocurrents over previously fabricated Ge QD devices. At 0.5 V bias, the currents in our devices are competitive with thin-film Ge photovoltaics.

Original languageEnglish (US)
Article number223506
JournalApplied Physics Letters
Volume103
Issue number22
DOIs
StatePublished - Nov 25 2013

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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