Quantum dot Ge/TiO2 heterojunction photoconductor fabrication and performance

Carena P. Church; Elayaraja Muthuswamy; Guangmei Zhai; Susan M. Kauzlarich; Sue A. Carter

doi:10.1063/1.4826916

Quantum dot Ge/TiO₂ heterojunction photoconductor fabrication and performance

Carena P. Church, Elayaraja Muthuswamy, Guangmei Zhai, Susan M. Kauzlarich, Sue A. Carter

Chemistry

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

Spun cast TiO₂-Ge quantum dot (QD) heterojunction type photodetectors have been fabricated and characterized, with interest paid to photocurrent enhancements related to device design. Performance as a function of absorber layer thickness, QD size, and back contact is investigated. We have achieved ultra-thin (∼200 nm) devices with photocurrents at 0.5 V of 10 ^-4 A cm^-2 while the thickest devices have photocurrents at 0.5 V of 10^-2 A cm^- ² with on-off ratios >100, which represents 5 orders of magnitude increase in photocurrents over previously fabricated Ge QD devices. At 0.5 V bias, the currents in our devices are competitive with thin-film Ge photovoltaics.

Original language	English (US)
Article number	223506
Journal	Applied Physics Letters
Volume	103
Issue number	22
DOIs	https://doi.org/10.1063/1.4826916
State	Published - Nov 25 2013

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4826916

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abstract = "Spun cast TiO2-Ge quantum dot (QD) heterojunction type photodetectors have been fabricated and characterized, with interest paid to photocurrent enhancements related to device design. Performance as a function of absorber layer thickness, QD size, and back contact is investigated. We have achieved ultra-thin (∼200 nm) devices with photocurrents at 0.5 V of 10 -4 A cm-2 while the thickest devices have photocurrents at 0.5 V of 10-2 A cm- 2 with on-off ratios >100, which represents 5 orders of magnitude increase in photocurrents over previously fabricated Ge QD devices. At 0.5 V bias, the currents in our devices are competitive with thin-film Ge photovoltaics.",

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AU - Church, Carena P.

AU - Muthuswamy, Elayaraja

AU - Zhai, Guangmei

AU - Kauzlarich, Susan M.

AU - Carter, Sue A.

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AB - Spun cast TiO2-Ge quantum dot (QD) heterojunction type photodetectors have been fabricated and characterized, with interest paid to photocurrent enhancements related to device design. Performance as a function of absorber layer thickness, QD size, and back contact is investigated. We have achieved ultra-thin (∼200 nm) devices with photocurrents at 0.5 V of 10 -4 A cm-2 while the thickest devices have photocurrents at 0.5 V of 10-2 A cm- 2 with on-off ratios >100, which represents 5 orders of magnitude increase in photocurrents over previously fabricated Ge QD devices. At 0.5 V bias, the currents in our devices are competitive with thin-film Ge photovoltaics.

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