TY - JOUR
T1 - Quantum dot Ge/TiO2 heterojunction photoconductor fabrication and performance
AU - Church, Carena P.
AU - Muthuswamy, Elayaraja
AU - Zhai, Guangmei
AU - Kauzlarich, Susan M.
AU - Carter, Sue A.
PY - 2013/11/25
Y1 - 2013/11/25
N2 - Spun cast TiO2-Ge quantum dot (QD) heterojunction type photodetectors have been fabricated and characterized, with interest paid to photocurrent enhancements related to device design. Performance as a function of absorber layer thickness, QD size, and back contact is investigated. We have achieved ultra-thin (∼200 nm) devices with photocurrents at 0.5 V of 10 -4 A cm-2 while the thickest devices have photocurrents at 0.5 V of 10-2 A cm- 2 with on-off ratios >100, which represents 5 orders of magnitude increase in photocurrents over previously fabricated Ge QD devices. At 0.5 V bias, the currents in our devices are competitive with thin-film Ge photovoltaics.
AB - Spun cast TiO2-Ge quantum dot (QD) heterojunction type photodetectors have been fabricated and characterized, with interest paid to photocurrent enhancements related to device design. Performance as a function of absorber layer thickness, QD size, and back contact is investigated. We have achieved ultra-thin (∼200 nm) devices with photocurrents at 0.5 V of 10 -4 A cm-2 while the thickest devices have photocurrents at 0.5 V of 10-2 A cm- 2 with on-off ratios >100, which represents 5 orders of magnitude increase in photocurrents over previously fabricated Ge QD devices. At 0.5 V bias, the currents in our devices are competitive with thin-film Ge photovoltaics.
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U2 - 10.1063/1.4826916
DO - 10.1063/1.4826916
M3 - Article
AN - SCOPUS:84888630738
VL - 103
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 22
M1 - 223506
ER -