Abstract
We have fabricated Ag/AhOs/Al tunnel junctions on Si substrates using a new process. This process was developed to fabricate superconducting tunnel junctions (STJs) on the surface of a superconductor. These junctions allow us to study the proximity effect of a superconducting Al film on a normal metal trapping layer. In addition these devices allow us to measure the hot-electron diffusion constant using a single junction. Lastly these devices will help us optimize the design and fabrication of tunnel junctions on the surface of high-Z ultra-pure superconducting crystals.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 3379-3382 |
| Number of pages | 4 |
| Journal | IEEE Transactions on Applied Superconductivity |
| Volume | 7 |
| Issue number | 2 PART 3 |
| State | Published - Dec 1 1997 |
| Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering