Proximity effect and hot-electron diffusion in ag/al2o3/al tunnel junctions

H. Netel, J. Jochum, Simon E. Labov, C. A. Mears, Matthias Frank

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

We have fabricated Ag/AhOs/Al tunnel junctions on Si substrates using a new process. This process was developed to fabricate superconducting tunnel junctions (STJs) on the surface of a superconductor. These junctions allow us to study the proximity effect of a superconducting Al film on a normal metal trapping layer. In addition these devices allow us to measure the hot-electron diffusion constant using a single junction. Lastly these devices will help us optimize the design and fabrication of tunnel junctions on the surface of high-Z ultra-pure superconducting crystals.

Original languageEnglish (US)
Pages (from-to)3379-3382
Number of pages4
JournalIEEE Transactions on Applied Superconductivity
Volume7
Issue number2 PART 3
StatePublished - Dec 1 1997
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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