Abstract
We have fabricated Ag/AhOs/Al tunnel junctions on Si substrates using a new process. This process was developed to fabricate superconducting tunnel junctions (STJs) on the surface of a superconductor. These junctions allow us to study the proximity effect of a superconducting Al film on a normal metal trapping layer. In addition these devices allow us to measure the hot-electron diffusion constant using a single junction. Lastly these devices will help us optimize the design and fabrication of tunnel junctions on the surface of high-Z ultra-pure superconducting crystals.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 3379-3382 |
| Number of pages | 4 |
| Journal | IEEE Transactions on Applied Superconductivity |
| Volume | 7 |
| Issue number | 2 PART 3 |
| State | Published - Dec 1 1997 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
Cite this
Proximity effect and hot-electron diffusion in ag/al2o3/al tunnel junctions. / Netel, H.; Jochum, J.; Labov, Simon E.; Mears, C. A.; Frank, Matthias.
In: IEEE Transactions on Applied Superconductivity, Vol. 7, No. 2 PART 3, 01.12.1997, p. 3379-3382.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Proximity effect and hot-electron diffusion in ag/al2o3/al tunnel junctions
AU - Netel, H.
AU - Jochum, J.
AU - Labov, Simon E.
AU - Mears, C. A.
AU - Frank, Matthias
PY - 1997/12/1
Y1 - 1997/12/1
N2 - We have fabricated Ag/AhOs/Al tunnel junctions on Si substrates using a new process. This process was developed to fabricate superconducting tunnel junctions (STJs) on the surface of a superconductor. These junctions allow us to study the proximity effect of a superconducting Al film on a normal metal trapping layer. In addition these devices allow us to measure the hot-electron diffusion constant using a single junction. Lastly these devices will help us optimize the design and fabrication of tunnel junctions on the surface of high-Z ultra-pure superconducting crystals.
AB - We have fabricated Ag/AhOs/Al tunnel junctions on Si substrates using a new process. This process was developed to fabricate superconducting tunnel junctions (STJs) on the surface of a superconductor. These junctions allow us to study the proximity effect of a superconducting Al film on a normal metal trapping layer. In addition these devices allow us to measure the hot-electron diffusion constant using a single junction. Lastly these devices will help us optimize the design and fabrication of tunnel junctions on the surface of high-Z ultra-pure superconducting crystals.
UR - http://www.scopus.com/inward/record.url?scp=0031163406&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0031163406&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0031163406
VL - 7
SP - 3379
EP - 3382
JO - IEEE Transactions on Applied Superconductivity
JF - IEEE Transactions on Applied Superconductivity
SN - 1051-8223
IS - 2 PART 3
ER -