Abstract
We have fabricated Ag/AhOs/Al tunnel junctions on Si substrates using a new process. This process was developed to fabricate superconducting tunnel junctions (STJs) on the surface of a superconductor. These junctions allow us to study the proximity effect of a superconducting Al film on a normal metal trapping layer. In addition these devices allow us to measure the hot-electron diffusion constant using a single junction. Lastly these devices will help us optimize the design and fabrication of tunnel junctions on the surface of high-Z ultra-pure superconducting crystals.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 3379-3382 |
| Number of pages | 4 |
| Journal | IEEE Transactions on Applied Superconductivity |
| Volume | 7 |
| Issue number | 2 PART 3 |
| State | Published - Dec 1 1997 |
| Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
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Netel, H., Jochum, J., Labov, S. E., Mears, C. A., & Frank, M. (1997). Proximity effect and hot-electron diffusion in ag/al2o3/al tunnel junctions. IEEE Transactions on Applied Superconductivity, 7(2 PART 3), 3379-3382.