Phonon mode and electronic bottleneck associated with the nonradiative relaxation in Ni2+-doped MgO

S. G. Demos, B. Y. Han, R. R. Alfano

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Using the up-converted hot luminescence technique, the measurements performed in Ni2+:MgO are reported in order to obtain information on the phonon modes and electronic bottlenecks associated with the nonradiative relaxation of the impurity Ni2+ ions. This technique is useful in obtaining information regarding the phonon modes involved in the radiationless relaxation, on electronic bottlenecks, and short-lived electronic states of impurity metal ions in dielectric crystals.

Original languageEnglish (US)
Pages (from-to)635-637
Number of pages3
JournalApplied Physics Letters
Volume67
Issue number5
DOIs
StatePublished - Jan 1 1995
Externally publishedYes

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electronics
impurities
metal ions
luminescence
crystals
ions

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Phonon mode and electronic bottleneck associated with the nonradiative relaxation in Ni2+-doped MgO. / Demos, S. G.; Han, B. Y.; Alfano, R. R.

In: Applied Physics Letters, Vol. 67, No. 5, 01.01.1995, p. 635-637.

Research output: Contribution to journalArticle

Demos, S. G. ; Han, B. Y. ; Alfano, R. R. / Phonon mode and electronic bottleneck associated with the nonradiative relaxation in Ni2+-doped MgO. In: Applied Physics Letters. 1995 ; Vol. 67, No. 5. pp. 635-637.
@article{be605aaf86aa46799b4027bd31757773,
title = "Phonon mode and electronic bottleneck associated with the nonradiative relaxation in Ni2+-doped MgO",
abstract = "Using the up-converted hot luminescence technique, the measurements performed in Ni2+:MgO are reported in order to obtain information on the phonon modes and electronic bottlenecks associated with the nonradiative relaxation of the impurity Ni2+ ions. This technique is useful in obtaining information regarding the phonon modes involved in the radiationless relaxation, on electronic bottlenecks, and short-lived electronic states of impurity metal ions in dielectric crystals.",
author = "Demos, {S. G.} and Han, {B. Y.} and Alfano, {R. R.}",
year = "1995",
month = "1",
day = "1",
doi = "10.1063/1.115186",
language = "English (US)",
volume = "67",
pages = "635--637",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "5",

}

TY - JOUR

T1 - Phonon mode and electronic bottleneck associated with the nonradiative relaxation in Ni2+-doped MgO

AU - Demos, S. G.

AU - Han, B. Y.

AU - Alfano, R. R.

PY - 1995/1/1

Y1 - 1995/1/1

N2 - Using the up-converted hot luminescence technique, the measurements performed in Ni2+:MgO are reported in order to obtain information on the phonon modes and electronic bottlenecks associated with the nonradiative relaxation of the impurity Ni2+ ions. This technique is useful in obtaining information regarding the phonon modes involved in the radiationless relaxation, on electronic bottlenecks, and short-lived electronic states of impurity metal ions in dielectric crystals.

AB - Using the up-converted hot luminescence technique, the measurements performed in Ni2+:MgO are reported in order to obtain information on the phonon modes and electronic bottlenecks associated with the nonradiative relaxation of the impurity Ni2+ ions. This technique is useful in obtaining information regarding the phonon modes involved in the radiationless relaxation, on electronic bottlenecks, and short-lived electronic states of impurity metal ions in dielectric crystals.

UR - http://www.scopus.com/inward/record.url?scp=0029343557&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029343557&partnerID=8YFLogxK

U2 - 10.1063/1.115186

DO - 10.1063/1.115186

M3 - Article

AN - SCOPUS:0029343557

VL - 67

SP - 635

EP - 637

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 5

ER -