Pattern transfer of electron beam modified self-assembled monolayers for high-resolution lithography

M. J. Lercel; M. Rooks; R. C. Tiberio; H. G. Craighead; C. W. Sheen; A. N. Parikh; D. L. Allara

doi:10.1116/1.588225

Pattern transfer of electron beam modified self-assembled monolayers for high-resolution lithography

M. J. Lercel, M. Rooks, R. C. Tiberio, H. G. Craighead, C. W. Sheen, A. N. Parikh, D. L. Allara

Research output: Contribution to journal › Article › peer-review

85 Scopus citations

Abstract

Self-assembled monolayers of octadecylsiloxane and octadecylthiol have been modified by high-resolution electron beam lithography. Focused electron beams from 1 to 50 keV and scanning tunneling microscopy at approx.10 eV have been used as patterning tools. The patterns have been transferred into many substrates by wet, dry, and combinations of wet and dry etches. Wet etching almost always results in a positive tone, but reactive ion etching of GaAs with Cl₂ at very low dc biases (<10 V) results in a negative tone. The effect of electron beam damage on the monolayers and the subsequent etching reactions has been explored through x-ray photoelectron spectroscopy.

Original language	English (US)
Pages (from-to)	1139-1143
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	13
Issue number	3
DOIs	https://doi.org/10.1116/1.588225
State	Published - May 1995
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)

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Pattern transfer of electron beam modified self-assembled monolayers for high-resolution lithography. / Lercel, M. J.; Rooks, M.; Tiberio, R. C.; Craighead, H. G.; Sheen, C. W.; Parikh, A. N.; Allara, D. L.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 13, No. 3, 05.1995, p. 1139-1143.

Research output: Contribution to journal › Article › peer-review

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abstract = "Self-assembled monolayers of octadecylsiloxane and octadecylthiol have been modified by high-resolution electron beam lithography. Focused electron beams from 1 to 50 keV and scanning tunneling microscopy at approx.10 eV have been used as patterning tools. The patterns have been transferred into many substrates by wet, dry, and combinations of wet and dry etches. Wet etching almost always results in a positive tone, but reactive ion etching of GaAs with Cl2 at very low dc biases (<10 V) results in a negative tone. The effect of electron beam damage on the monolayers and the subsequent etching reactions has been explored through x-ray photoelectron spectroscopy.",

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AU - Tiberio, R. C.

AU - Craighead, H. G.

AU - Sheen, C. W.

AU - Parikh, A. N.

AU - Allara, D. L.

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Pattern transfer of electron beam modified self-assembled monolayers for high-resolution lithography

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