Oxidation kinetics in SrTiO3 homoepitaxy on SrTiO3(001)

X. D. Zhu, Weidong Si, X. X. Xi, Qidu Jiang

Research output: Contribution to journalArticle

24 Scopus citations

Abstract

Using an oblique-incidence optical reflectivity difference technique, we investigated kinetic processes in SrTiO3 homoepitaxy on SrTiO3(001) under pulsed-laser deposition conditions. Depending upon growth temperature and oxygen ambient pressure, we found that the oxidation of an as-grown SrTiO3 monolayer may take a much longer time to complete than the recrystallization of the monolayer. The oxidation reaction was found to be characterized by an effective activation energy barrier of 1.35 eV and a large preexponential factor.

Original languageEnglish (US)
Pages (from-to)460-462
Number of pages3
JournalApplied Physics Letters
Volume78
Issue number4
DOIs
StatePublished - Jan 22 2001

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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