Oxidation kinetics in SrTiO 3 homoepitaxy

X. D. Zhu, W. Si, X. X. Xi, Q. Jiang

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Using an oblique-incidence optical reflectivity difference technique, we investigated kinetic processes in SrTiO 3 homoepitaxy on SrTiO 3(001) under pulsed laser deposition conditions. Depending upon growth temperature and oxygen ambient pressure, we found that the oxidation of an as-grown SrTiO 3 monolayer may take a much longer time to complete than the recrystallization of the monolayer. The oxidation reaction was found to be characterized by an effective activation energy barrier of 1.35 eV and a large pre-exponential factor.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsM. Yaedon, S. Chiang, R.F.C. Farrow, J.W. Evans, O. Auciello
Number of pages7
StatePublished - 2000
EventRecent Developments in Oxide and Metal Epitaxy -Theory and Experiment - San Francisco, CA, United States
Duration: Apr 23 2000Apr 26 2000


OtherRecent Developments in Oxide and Metal Epitaxy -Theory and Experiment
CountryUnited States
CitySan Francisco, CA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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    Zhu, X. D., Si, W., Xi, X. X., & Jiang, Q. (2000). Oxidation kinetics in SrTiO 3 homoepitaxy In M. Yaedon, S. Chiang, R. F. C. Farrow, J. W. Evans, & O. Auciello (Eds.), Materials Research Society Symposium - Proceedings (Vol. 619, pp. 115-121)