Observation of quantum confined excited states of GaN nanocrystals

Valerie J. Leppert, Christina J. Zhang, Howard W H Lee, Ian M. Kennedy, Subhash H. Risbud

Research output: Contribution to journalArticle

27 Scopus citations

Abstract

GaN nanocrystals with an average diameter of 4.5 nm±1.6 nm were synthesized by pulsed laser ablation of a gallium metal target in a nitrogen atmosphere. Transmission electron microscopy and selected area electron diffraction confirmed the hexagonal structure and size of the nanocrystals. Optical absorption and photoluminescence spectroscopy revealed quantum confined excited states in the nanocrystalline samples with features at 4.43 eV (280 nm) and 5.47 eV (227 nm).

Original languageEnglish (US)
Pages (from-to)3035-3037
Number of pages3
JournalApplied Physics Letters
Volume72
Issue number23
DOIs
StatePublished - 1998

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Leppert, V. J., Zhang, C. J., Lee, H. W. H., Kennedy, I. M., & Risbud, S. H. (1998). Observation of quantum confined excited states of GaN nanocrystals. Applied Physics Letters, 72(23), 3035-3037. https://doi.org/10.1063/1.121532