Abstract
Defect clusters in the bulk of large KDP crystals are revealed using a microscopic fluorescence imaging system and CW laser illumination. Exposure of the crystal to high power 355-nm, 3-ns laser irradiation leads to a significant reduction of the number of observed optically active centers. The initially observed defect cluster concentration is approximately 10 4-10 6 per mm 3 depending on the crystal growth method and sector of the crystal. The number of defect clusters can be reduced by a factor of 10 2 or more under exposure to 355-nm laser irradiation while their average intensities also decreases. Spectroscopic measurements provide information on the electronic structure of the defects.
| Original language | English (US) |
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| Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
| Publisher | Society of Photo-Optical Instrumentation Engineers |
| Pages | 509-515 |
| Number of pages | 7 |
| Volume | 3578 |
| State | Published - 1999 |
| Externally published | Yes |
| Event | Proceedings of the 1998 30th Annual Boulder Damage Symposium on Optical Materials for High-Power Lasers - 1998 - Boulder, CO, USA Duration: Sep 28 1998 → Oct 1 1998 |
Other
| Other | Proceedings of the 1998 30th Annual Boulder Damage Symposium on Optical Materials for High-Power Lasers - 1998 |
|---|---|
| City | Boulder, CO, USA |
| Period | 9/28/98 → 10/1/98 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics