Observation of photoexcited emission clusters in the bulk of KDP and laser conditioning under 355-nm irradiation

S. G. Demos; M. Staggs; M. Yan; H. B. Radousky; J. J. De Yoreo

Observation of photoexcited emission clusters in the bulk of KDP and laser conditioning under 355-nm irradiation

S. G. Demos, M. Staggs, M. Yan, H. B. Radousky, J. J. De Yoreo

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Abstract

Defect clusters in the bulk of large KDP crystals are revealed using a microscopic fluorescence imaging system and CW laser illumination. Exposure of the crystal to high power 355-nm, 3-ns laser irradiation leads to a significant reduction of the number of observed optically active centers. The initially observed defect cluster concentration is approximately 10 ⁴-10 ⁶ per mm ³ depending on the crystal growth method and sector of the crystal. The number of defect clusters can be reduced by a factor of 10 ² or more under exposure to 355-nm laser irradiation while their average intensities also decreases. Spectroscopic measurements provide information on the electronic structure of the defects.

Original language	English (US)
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Publisher	Society of Photo-Optical Instrumentation Engineers
Pages	509-515
Number of pages	7
Volume	3578
State	Published - 1999
Externally published	Yes
Event	Proceedings of the 1998 30th Annual Boulder Damage Symposium on Optical Materials for High-Power Lasers - 1998 - Boulder, CO, USA Duration: Sep 28 1998 → Oct 1 1998

Other

Other	Proceedings of the 1998 30th Annual Boulder Damage Symposium on Optical Materials for High-Power Lasers - 1998
City	Boulder, CO, USA
Period	9/28/98 → 10/1/98

ASJC Scopus subject areas

Electrical and Electronic Engineering
Condensed Matter Physics

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Observation of photoexcited emission clusters in the bulk of KDP and laser conditioning under 355-nm irradiation. / Demos, S. G.; Staggs, M.; Yan, M.; Radousky, H. B.; De Yoreo, J. J.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 3578 Society of Photo-Optical Instrumentation Engineers, 1999. p. 509-515.

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Demos, SG, Staggs, M, Yan, M, Radousky, HB & De Yoreo, JJ 1999, Observation of photoexcited emission clusters in the bulk of KDP and laser conditioning under 355-nm irradiation. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 3578, Society of Photo-Optical Instrumentation Engineers, pp. 509-515, Proceedings of the 1998 30th Annual Boulder Damage Symposium on Optical Materials for High-Power Lasers - 1998, Boulder, CO, USA, 9/28/98.

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abstract = "Defect clusters in the bulk of large KDP crystals are revealed using a microscopic fluorescence imaging system and CW laser illumination. Exposure of the crystal to high power 355-nm, 3-ns laser irradiation leads to a significant reduction of the number of observed optically active centers. The initially observed defect cluster concentration is approximately 10 4-10 6 per mm 3 depending on the crystal growth method and sector of the crystal. The number of defect clusters can be reduced by a factor of 10 2 or more under exposure to 355-nm laser irradiation while their average intensities also decreases. Spectroscopic measurements provide information on the electronic structure of the defects. ",

author = "Demos, {S. G.} and M. Staggs and M. Yan and Radousky, {H. B.} and {De Yoreo}, {J. J.}",

year = "1999",

language = "English (US)",

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pages = "509--515",

booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "Society of Photo-Optical Instrumentation Engineers",

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AU - Radousky, H. B.

AU - De Yoreo, J. J.

PY - 1999

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