Luminescence investigation of SiO 2 surfaces damaged by 0.35 mm laser illumination

M. R. Kozlowski, C. L. Battersby, S. G. Demos

Research output: Chapter in Book/Report/Conference proceedingConference contribution

21 Scopus citations

Abstract

Following initiation at absorbing surface flaws, UV laser-induced damage to polished fused-silica surfaces continues to grow upon subsequent illumination. In this study photoluminescence spectroscopy was used to detect the formation of a modified, absorbing layer of silica that could be responsible for the continued growth of the damage site. For damage sites created with pulsed 355 nm illumination, three characteristic photoluminescence peaks are detected within the damage sites when excited with a 351 nm CW beam. Two of the peaks are likely due to the well-known E′ and NBOHC defects associated with oxygen vacancies and broken Si-O bonds, respectively. The third, and dominant, peak at 560 nm has not been clearly identified, but is likely associated with a change in stoichiometry of the silica. The relative intensities of the peaks are non-uniform across individual damage sites. The photoluminescence data is being combined with insights from various optical and electron microscopies to develop an understanding of laser-induced damage sites. The objective is to develop strategies to slow or stop the growth of the damage sites.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSociety of Photo-Optical Instrumentation Engineers
Pages138-144
Number of pages7
Volume3902
StatePublished - 2000
Externally publishedYes
Event31st Annual Boulder Damage Symposium: 'Laser-Induced Damage in Optical Materials 1999' - Boulder, CO, USA
Duration: Oct 4 1999Oct 7 1999

Other

Other31st Annual Boulder Damage Symposium: 'Laser-Induced Damage in Optical Materials 1999'
CityBoulder, CO, USA
Period10/4/9910/7/99

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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