Localized states within the gap of Ce3 Au3 Sb4

Han Oh Lee, V. A. Sidorov, P. Schlottmann, Cathie Condron, Peter Klavins, Susan M. Kauzlarich, J. D. Thompson, Z. Fisk

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

The temperature dependence of the specific heat and of the resistivity under pressure has been measured for single crystals of the semiconductor Ce3 Au3 Sb4. The transport data follow an exponential activation and variable range hopping at low T, consistent with weak disorder and localization, while C / T has a - ln T dependence with large entropy. Thus the properties of Ce3 Au3 Sb4 are very different from those of ordinary Kondo insulators.

Original languageEnglish (US)
Pages (from-to)1476-1478
Number of pages3
JournalPhysica B: Condensed Matter
Volume403
Issue number5-9
DOIs
StatePublished - Apr 1 2008

Keywords

  • Heavy Fermion
  • Kondo insulator
  • Pressure
  • Resistivity
  • Specific heat

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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    Lee, H. O., Sidorov, V. A., Schlottmann, P., Condron, C., Klavins, P., Kauzlarich, S. M., Thompson, J. D., & Fisk, Z. (2008). Localized states within the gap of Ce3 Au3 Sb4 Physica B: Condensed Matter, 403(5-9), 1476-1478. https://doi.org/10.1016/j.physb.2007.10.309