Light emission from silicon quantum dots

Howard W.H. Lee, Peter A. Thielen, Gildardo R. Delgado, Susan M. Kauzlarich, Chung Sung Yang, Boyd R. Taylor

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Inducing efficient visible light emission from silicon (Si) and understanding the underlying physics have long defined fascinating scientific and technological challenges. We present a comprehensive study on the origin and nature of red to ultraviolet (UV) light emission from Si quantum dots (QDs). We report the strongest quantum confinement (QC) effects to date and find that: (i) light emission can be stable in ambient and continuously tunable from the red to the UV through a single mechanism, i.e., QC, (ii) the energy gap increases from QC with decreasing size (Eg(d)- 1.14 ∝1/41.4) to energies significantly greater than previously observed (3.80 eV), (iii) the lowest optical transition remains predominantly indirect despite strong QC in small QDs (∼14 Å diameter), and (iv) these properties can apply to QDs with and without a surface oxide layer. These results agree well with calculations that go beyond effective mass approximations. Visible light emission can also result from localized traps and may be mistaken for quantum confined emission.

Original languageEnglish (US)
Article number1029908
Pages (from-to)147-164
Number of pages18
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume10299
DOIs
StatePublished - Jun 23 2000

Fingerprint

Quantum confinement
Light emission
Silicon
Quantum Dots
Semiconductor quantum dots
light emission
quantum dots
silicon
Ultraviolet
Optical transitions
ultraviolet emission
optical transition
Energy Gap
ultraviolet radiation
Effective Mass
Oxides
Energy gap
Trap
Physics
traps

Keywords

  • Light emission
  • Photoluminescence
  • Porous silicon
  • Quantum confinement
  • Quantum dots
  • Silicon
  • Traps

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Lee, H. W. H., Thielen, P. A., Delgado, G. R., Kauzlarich, S. M., Yang, C. S., & Taylor, B. R. (2000). Light emission from silicon quantum dots. Proceedings of SPIE - The International Society for Optical Engineering, 10299, 147-164. [1029908]. https://doi.org/10.1117/12.419800

Light emission from silicon quantum dots. / Lee, Howard W.H.; Thielen, Peter A.; Delgado, Gildardo R.; Kauzlarich, Susan M.; Yang, Chung Sung; Taylor, Boyd R.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 10299, 1029908, 23.06.2000, p. 147-164.

Research output: Contribution to journalArticle

Lee, HWH, Thielen, PA, Delgado, GR, Kauzlarich, SM, Yang, CS & Taylor, BR 2000, 'Light emission from silicon quantum dots', Proceedings of SPIE - The International Society for Optical Engineering, vol. 10299, 1029908, pp. 147-164. https://doi.org/10.1117/12.419800
Lee HWH, Thielen PA, Delgado GR, Kauzlarich SM, Yang CS, Taylor BR. Light emission from silicon quantum dots. Proceedings of SPIE - The International Society for Optical Engineering. 2000 Jun 23;10299:147-164. 1029908. https://doi.org/10.1117/12.419800
Lee, Howard W.H. ; Thielen, Peter A. ; Delgado, Gildardo R. ; Kauzlarich, Susan M. ; Yang, Chung Sung ; Taylor, Boyd R. / Light emission from silicon quantum dots. In: Proceedings of SPIE - The International Society for Optical Engineering. 2000 ; Vol. 10299. pp. 147-164.
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