Laser damage mechanisms in conductive widegap semiconductor films

Jae Hyuck Yoo, Marlon G. Menor, John J. Adams, Rajesh N. Raman, Jonathan R I Lee, Tammy Y. Olson, Nan Shen, Joonki Suh, Stavros G. Demos, Jeff Bude, Selim Elhadj

Research output: Contribution to journalArticle

16 Scopus citations

Abstract

Laser damage mechanisms of two conductive wide-bandgap semiconductor films - indium tin oxide (ITO) and silicon doped GaN (Si:GaN) were studied via microscopy, spectroscopy, photoluminescence (PL), and elemental analysis. Nanosecond laser pulse exposures with a laser photon energy (1.03 eV, 1064 nm) smaller than the conductive films bandgaps were applied and radically different film damage morphologies were produced. The laser damaged ITO film exhibited deterministic features of thermal degradation. In contrast, laser damage in the Si:GaN film resulted in highly localized eruptions originating at interfaces. For ITO, thermally driven damage was related to free carrier absorption and, for GaN, carbon complexes were proposed as potential damage precursors or markers.

Original languageEnglish (US)
Pages (from-to)17616-17634
Number of pages19
JournalOptics Express
Volume24
Issue number16
DOIs
StatePublished - Aug 8 2016
Externally publishedYes

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ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Yoo, J. H., Menor, M. G., Adams, J. J., Raman, R. N., Lee, J. R. I., Olson, T. Y., Shen, N., Suh, J., Demos, S. G., Bude, J., & Elhadj, S. (2016). Laser damage mechanisms in conductive widegap semiconductor films. Optics Express, 24(16), 17616-17634. https://doi.org/10.1364/OE.24.017616