Laser damage mechanisms in conductive widegap semiconductor films

Jae Hyuck Yoo, Marlon G. Menor, John J. Adams, Rajesh N. Raman, Jonathan R I Lee, Tammy Y. Olson, Nan Shen, Joonki Suh, Stavros G. Demos, Jeff Bude, Selim Elhadj

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Laser damage mechanisms of two conductive wide-bandgap semiconductor films - indium tin oxide (ITO) and silicon doped GaN (Si:GaN) were studied via microscopy, spectroscopy, photoluminescence (PL), and elemental analysis. Nanosecond laser pulse exposures with a laser photon energy (1.03 eV, 1064 nm) smaller than the conductive films bandgaps were applied and radically different film damage morphologies were produced. The laser damaged ITO film exhibited deterministic features of thermal degradation. In contrast, laser damage in the Si:GaN film resulted in highly localized eruptions originating at interfaces. For ITO, thermally driven damage was related to free carrier absorption and, for GaN, carbon complexes were proposed as potential damage precursors or markers.

Original languageEnglish (US)
Pages (from-to)17616-17634
Number of pages19
JournalOptics Express
Volume24
Issue number16
DOIs
StatePublished - Aug 8 2016
Externally publishedYes

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laser damage
indium oxides
tin oxides
damage
lasers
thermal degradation
silicon
volcanic eruptions
markers
oxide films
microscopy
photoluminescence
carbon
photons
pulses
spectroscopy
energy

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Yoo, J. H., Menor, M. G., Adams, J. J., Raman, R. N., Lee, J. R. I., Olson, T. Y., ... Elhadj, S. (2016). Laser damage mechanisms in conductive widegap semiconductor films. Optics Express, 24(16), 17616-17634. https://doi.org/10.1364/OE.24.017616

Laser damage mechanisms in conductive widegap semiconductor films. / Yoo, Jae Hyuck; Menor, Marlon G.; Adams, John J.; Raman, Rajesh N.; Lee, Jonathan R I; Olson, Tammy Y.; Shen, Nan; Suh, Joonki; Demos, Stavros G.; Bude, Jeff; Elhadj, Selim.

In: Optics Express, Vol. 24, No. 16, 08.08.2016, p. 17616-17634.

Research output: Contribution to journalArticle

Yoo, JH, Menor, MG, Adams, JJ, Raman, RN, Lee, JRI, Olson, TY, Shen, N, Suh, J, Demos, SG, Bude, J & Elhadj, S 2016, 'Laser damage mechanisms in conductive widegap semiconductor films', Optics Express, vol. 24, no. 16, pp. 17616-17634. https://doi.org/10.1364/OE.24.017616
Yoo JH, Menor MG, Adams JJ, Raman RN, Lee JRI, Olson TY et al. Laser damage mechanisms in conductive widegap semiconductor films. Optics Express. 2016 Aug 8;24(16):17616-17634. https://doi.org/10.1364/OE.24.017616
Yoo, Jae Hyuck ; Menor, Marlon G. ; Adams, John J. ; Raman, Rajesh N. ; Lee, Jonathan R I ; Olson, Tammy Y. ; Shen, Nan ; Suh, Joonki ; Demos, Stavros G. ; Bude, Jeff ; Elhadj, Selim. / Laser damage mechanisms in conductive widegap semiconductor films. In: Optics Express. 2016 ; Vol. 24, No. 16. pp. 17616-17634.
@article{6372fa9fa9444a4d8a49a17c30f492ac,
title = "Laser damage mechanisms in conductive widegap semiconductor films",
abstract = "Laser damage mechanisms of two conductive wide-bandgap semiconductor films - indium tin oxide (ITO) and silicon doped GaN (Si:GaN) were studied via microscopy, spectroscopy, photoluminescence (PL), and elemental analysis. Nanosecond laser pulse exposures with a laser photon energy (1.03 eV, 1064 nm) smaller than the conductive films bandgaps were applied and radically different film damage morphologies were produced. The laser damaged ITO film exhibited deterministic features of thermal degradation. In contrast, laser damage in the Si:GaN film resulted in highly localized eruptions originating at interfaces. For ITO, thermally driven damage was related to free carrier absorption and, for GaN, carbon complexes were proposed as potential damage precursors or markers.",
author = "Yoo, {Jae Hyuck} and Menor, {Marlon G.} and Adams, {John J.} and Raman, {Rajesh N.} and Lee, {Jonathan R I} and Olson, {Tammy Y.} and Nan Shen and Joonki Suh and Demos, {Stavros G.} and Jeff Bude and Selim Elhadj",
year = "2016",
month = "8",
day = "8",
doi = "10.1364/OE.24.017616",
language = "English (US)",
volume = "24",
pages = "17616--17634",
journal = "Optics Express",
issn = "1094-4087",
publisher = "The Optical Society",
number = "16",

}

TY - JOUR

T1 - Laser damage mechanisms in conductive widegap semiconductor films

AU - Yoo, Jae Hyuck

AU - Menor, Marlon G.

AU - Adams, John J.

AU - Raman, Rajesh N.

AU - Lee, Jonathan R I

AU - Olson, Tammy Y.

AU - Shen, Nan

AU - Suh, Joonki

AU - Demos, Stavros G.

AU - Bude, Jeff

AU - Elhadj, Selim

PY - 2016/8/8

Y1 - 2016/8/8

N2 - Laser damage mechanisms of two conductive wide-bandgap semiconductor films - indium tin oxide (ITO) and silicon doped GaN (Si:GaN) were studied via microscopy, spectroscopy, photoluminescence (PL), and elemental analysis. Nanosecond laser pulse exposures with a laser photon energy (1.03 eV, 1064 nm) smaller than the conductive films bandgaps were applied and radically different film damage morphologies were produced. The laser damaged ITO film exhibited deterministic features of thermal degradation. In contrast, laser damage in the Si:GaN film resulted in highly localized eruptions originating at interfaces. For ITO, thermally driven damage was related to free carrier absorption and, for GaN, carbon complexes were proposed as potential damage precursors or markers.

AB - Laser damage mechanisms of two conductive wide-bandgap semiconductor films - indium tin oxide (ITO) and silicon doped GaN (Si:GaN) were studied via microscopy, spectroscopy, photoluminescence (PL), and elemental analysis. Nanosecond laser pulse exposures with a laser photon energy (1.03 eV, 1064 nm) smaller than the conductive films bandgaps were applied and radically different film damage morphologies were produced. The laser damaged ITO film exhibited deterministic features of thermal degradation. In contrast, laser damage in the Si:GaN film resulted in highly localized eruptions originating at interfaces. For ITO, thermally driven damage was related to free carrier absorption and, for GaN, carbon complexes were proposed as potential damage precursors or markers.

UR - http://www.scopus.com/inward/record.url?scp=84987616124&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84987616124&partnerID=8YFLogxK

U2 - 10.1364/OE.24.017616

DO - 10.1364/OE.24.017616

M3 - Article

VL - 24

SP - 17616

EP - 17634

JO - Optics Express

JF - Optics Express

SN - 1094-4087

IS - 16

ER -