Kinetic roughening during rare-gas homoepitaxy

E. Nabighian, M. C. Bartelt, X. D. Zhu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Using an optical reflectivity difference technique, we monitored the growth of multilayer Xe films on a commensurate monolayer of Xe on Ni(111), from 35 to 60K. A transition occurs near 40K, from rough growth at low temperature to quasi-layer-by-layer growth characterized by persistent oscillations in the reflectivity difference. We discuss this transition in terms of changes in the island formation process and the onset of second layer nucleation. The Xe sticking coefficient at 40K is obtained from the period of the oscillations in the reflectivity difference. We find that the sticking coefficient decreases with increasing film thickness at fixed Xe pressure.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsH.N.G. Wadley, G.H. Gilmer, W.G. Barker
Pages115-121
Number of pages7
Volume616
StatePublished - 2000
EventNew Methods, Mechanisms and Models of Vapor Deposition - San Francisco, CA, United States
Duration: Apr 24 2000Apr 26 2000

Other

OtherNew Methods, Mechanisms and Models of Vapor Deposition
CountryUnited States
CitySan Francisco, CA
Period4/24/004/26/00

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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  • Cite this

    Nabighian, E., Bartelt, M. C., & Zhu, X. D. (2000). Kinetic roughening during rare-gas homoepitaxy. In H. N. G. Wadley, G. H. Gilmer, & W. G. Barker (Eds.), Materials Research Society Symposium - Proceedings (Vol. 616, pp. 115-121)