Kinetic roughening during rare-gas homoepitaxy

E. Nabighian, M. C. Bartelt, X. D. Zhu

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Using an optical-reflectivity-difference technique, we monitored the growth of multilayer Xe films on a commensurate monolayer of Xe on Ni(111) from 35 to 60 K. A transition occurs near 40 K from rough growth at low temperature to quasi-layer-by-layer growth characterized by persistent oscillations in the reflectivity difference. We discuss this transition in terms of changes in the island formation process and the onset of second-layer nucleation. The Xe sticking coefficient at 40 K is obtained from the period of the oscillations in the reflectivity difference. We find that the sticking coefficient decreases with increasing film thickness at fixed Xe pressure.

Original languageEnglish (US)
Pages (from-to)1619-1622
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume62
Issue number3
StatePublished - 2000

Fingerprint

Noble Gases
Inert gases
rare gases
reflectance
Kinetics
kinetics
oscillations
Multilayer films
coefficients
Film thickness
Monolayers
Nucleation
film thickness
nucleation
Temperature

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Nabighian, E., Bartelt, M. C., & Zhu, X. D. (2000). Kinetic roughening during rare-gas homoepitaxy. Physical Review B - Condensed Matter and Materials Physics, 62(3), 1619-1622.

Kinetic roughening during rare-gas homoepitaxy. / Nabighian, E.; Bartelt, M. C.; Zhu, X. D.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 62, No. 3, 2000, p. 1619-1622.

Research output: Contribution to journalArticle

Nabighian, E, Bartelt, MC & Zhu, XD 2000, 'Kinetic roughening during rare-gas homoepitaxy', Physical Review B - Condensed Matter and Materials Physics, vol. 62, no. 3, pp. 1619-1622.
Nabighian, E. ; Bartelt, M. C. ; Zhu, X. D. / Kinetic roughening during rare-gas homoepitaxy. In: Physical Review B - Condensed Matter and Materials Physics. 2000 ; Vol. 62, No. 3. pp. 1619-1622.
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