Abstract
Using an optical-reflectivity-difference technique, we monitored the growth of multilayer Xe films on a commensurate monolayer of Xe on Ni(111) from 35 to 60 K. A transition occurs near 40 K from rough growth at low temperature to quasi-layer-by-layer growth characterized by persistent oscillations in the reflectivity difference. We discuss this transition in terms of changes in the island formation process and the onset of second-layer nucleation. The Xe sticking coefficient at 40 K is obtained from the period of the oscillations in the reflectivity difference. We find that the sticking coefficient decreases with increasing film thickness at fixed Xe pressure.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1619-1622 |
| Number of pages | 4 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 62 |
| Issue number | 3 |
| State | Published - 2000 |
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ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
Kinetic roughening during rare-gas homoepitaxy. / Nabighian, E.; Bartelt, M. C.; Zhu, X. D.
In: Physical Review B - Condensed Matter and Materials Physics, Vol. 62, No. 3, 2000, p. 1619-1622.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Kinetic roughening during rare-gas homoepitaxy
AU - Nabighian, E.
AU - Bartelt, M. C.
AU - Zhu, X. D.
PY - 2000
Y1 - 2000
N2 - Using an optical-reflectivity-difference technique, we monitored the growth of multilayer Xe films on a commensurate monolayer of Xe on Ni(111) from 35 to 60 K. A transition occurs near 40 K from rough growth at low temperature to quasi-layer-by-layer growth characterized by persistent oscillations in the reflectivity difference. We discuss this transition in terms of changes in the island formation process and the onset of second-layer nucleation. The Xe sticking coefficient at 40 K is obtained from the period of the oscillations in the reflectivity difference. We find that the sticking coefficient decreases with increasing film thickness at fixed Xe pressure.
AB - Using an optical-reflectivity-difference technique, we monitored the growth of multilayer Xe films on a commensurate monolayer of Xe on Ni(111) from 35 to 60 K. A transition occurs near 40 K from rough growth at low temperature to quasi-layer-by-layer growth characterized by persistent oscillations in the reflectivity difference. We discuss this transition in terms of changes in the island formation process and the onset of second-layer nucleation. The Xe sticking coefficient at 40 K is obtained from the period of the oscillations in the reflectivity difference. We find that the sticking coefficient decreases with increasing film thickness at fixed Xe pressure.
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UR - http://www.scopus.com/inward/citedby.url?scp=0012020804&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0012020804
VL - 62
SP - 1619
EP - 1622
JO - Physical Review B-Condensed Matter
JF - Physical Review B-Condensed Matter
SN - 0163-1829
IS - 3
ER -