Kinetic roughening during rare-gas homoepitaxy

E. Nabighian, M. C. Bartelt, X. D. Zhu

Research output: Contribution to journalArticle

12 Scopus citations

Abstract

Using an optical-reflectivity-difference technique, we monitored the growth of multilayer Xe films on a commensurate monolayer of Xe on Ni(111) from 35 to 60 K. A transition occurs near 40 K from rough growth at low temperature to quasi-layer-by-layer growth characterized by persistent oscillations in the reflectivity difference. We discuss this transition in terms of changes in the island formation process and the onset of second-layer nucleation. The Xe sticking coefficient at 40 K is obtained from the period of the oscillations in the reflectivity difference. We find that the sticking coefficient decreases with increasing film thickness at fixed Xe pressure.

Original languageEnglish (US)
Pages (from-to)1619-1622
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume62
Issue number3
StatePublished - 2000

ASJC Scopus subject areas

  • Condensed Matter Physics

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  • Cite this

    Nabighian, E., Bartelt, M. C., & Zhu, X. D. (2000). Kinetic roughening during rare-gas homoepitaxy. Physical Review B - Condensed Matter and Materials Physics, 62(3), 1619-1622.