Abstract
Using an optical-reflectivity-difference technique, we monitored the growth of multilayer Xe films on a commensurate monolayer of Xe on Ni(111) from 35 to 60 K. A transition occurs near 40 K from rough growth at low temperature to quasi-layer-by-layer growth characterized by persistent oscillations in the reflectivity difference. We discuss this transition in terms of changes in the island formation process and the onset of second-layer nucleation. The Xe sticking coefficient at 40 K is obtained from the period of the oscillations in the reflectivity difference. We find that the sticking coefficient decreases with increasing film thickness at fixed Xe pressure.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1619-1622 |
| Number of pages | 4 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 62 |
| Issue number | 3 |
| State | Published - 2000 |
ASJC Scopus subject areas
- Condensed Matter Physics
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Nabighian, E., Bartelt, M. C., & Zhu, X. D. (2000). Kinetic roughening during rare-gas homoepitaxy. Physical Review B - Condensed Matter and Materials Physics, 62(3), 1619-1622.