The importance of controlling and characterizing the electronic properties of Si-SiO//2 and Si-metal interfaces has prompted interest in the atomic-scale chemistry and physics of those interfaces. We report an investigation of the clean Si(111) 7 multiplied by 7 surface under low pressure oxidation and thermal annealing. Recently, we demonstrated that optical second-harmonic generation (SHG) could be an effective in situ probe of atomic and molecular adsorption on a metallic surface. Here, we show that SHG is equally sensitive to the electronic properties of the Si surface and use SHG to study the growth and thermal desorption of the first two layers of surface oxide, the segregation of less than 2% of a monolayer of P, and the effect of surface P on the growth of the first layer of oxide.
|Original language||English (US)|
|Title of host publication||Unknown Host Publication Title|
|Editors||James D. Chadi, Walter A. Harrison|
|Place of Publication||New York, NY, USA|
|Number of pages||4|
|State||Published - 1985|
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