INVESTIGATION OF THE Si(111) SURFACE IN UHV: OXIDATION AND THE EFFECT OF SURFACE PHOSPHORUS.

H. W K Tom, X. D. Zhu, Y. R. Shen, G. A. Somorjai

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The importance of controlling and characterizing the electronic properties of Si-SiO//2 and Si-metal interfaces has prompted interest in the atomic-scale chemistry and physics of those interfaces. We report an investigation of the clean Si(111) 7 multiplied by 7 surface under low pressure oxidation and thermal annealing. Recently, we demonstrated that optical second-harmonic generation (SHG) could be an effective in situ probe of atomic and molecular adsorption on a metallic surface. Here, we show that SHG is equally sensitive to the electronic properties of the Si surface and use SHG to study the growth and thermal desorption of the first two layers of surface oxide, the segregation of less than 2% of a monolayer of P, and the effect of surface P on the growth of the first layer of oxide.

Original languageEnglish (US)
Title of host publicationUnknown Host Publication Title
EditorsJames D. Chadi, Walter A. Harrison
Place of PublicationNew York, NY, USA
PublisherSpringer-Verlag
Pages99-102
Number of pages4
ISBN (Print)0387961089
StatePublished - 1985

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Tom, H. W. K., Zhu, X. D., Shen, Y. R., & Somorjai, G. A. (1985). INVESTIGATION OF THE Si(111) SURFACE IN UHV: OXIDATION AND THE EFFECT OF SURFACE PHOSPHORUS. In J. D. Chadi, & W. A. Harrison (Eds.), Unknown Host Publication Title (pp. 99-102). Springer-Verlag.