Investigation of steady-state and transient defect populations in KH 2PO 4 subsequent to high fluence laser irradiation

S. G. Demos, M. Staggs, H. B. Radousky, J. J. De Yoreo

Research output: Chapter in Book/Report/Conference proceedingChapter

1 Scopus citations

Abstract

Microscopic fluorescence imaging and time-resolved Raman scattering are employed to investigate the effect of high power 355 nm laser irradiation on preexisting and transient defect populations in KH 2PO 4. Defect clusters in the bulk of KDP crystals are imaged with 1 micron spatial resolution using their NIR emission. The intensity of the emission clusters varies widely within the image field. The exposure of the crystal at high power 355 nm, 3 ns laser irradiation leads to a reduction of the number of observed optically active centers. In addition, time resolved Raman scattering was employed to study the transient generation of defects during high power 355 nm laser irradiation.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherSociety of Photo-Optical Instrumentation Engineers
Pages2-8
Number of pages7
Volume3610
StatePublished - 1999
Externally publishedYes
EventProceedings of the 1999 Laser Material Crystal Growth and Nonlinear Materials and Devices - San Jose, CA, USA
Duration: Jan 27 1999Jan 28 1999

Other

OtherProceedings of the 1999 Laser Material Crystal Growth and Nonlinear Materials and Devices
CitySan Jose, CA, USA
Period1/27/991/28/99

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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    Demos, S. G., Staggs, M., Radousky, H. B., & De Yoreo, J. J. (1999). Investigation of steady-state and transient defect populations in KH 2PO 4 subsequent to high fluence laser irradiation In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 3610, pp. 2-8). Society of Photo-Optical Instrumentation Engineers.