Investigation of optically active defect clusters in KH2PO4 under laser photoexcitation

S. G. Demos, M. Staggs, M. Yan, H. B. Radousky, J. J. De Yoreo

Research output: Contribution to journalArticle

20 Scopus citations

Abstract

Photoexcited defect clusters in the bulk of KH2PO4 crystals are investigated using a microscopic fluorescence imaging system with 1 μm spatial resolution. The observed defect cluster concentration is approximately 104-106 per mm3 depending on the crystal growth method and sector of the crystal. The intensity of the emission clusters varies widely within the image field while a nearly uniformly distributed background is present. Spectroscopic measurements provided information on the emission characteristics of the observed defect population.

Original languageEnglish (US)
Pages (from-to)3988-3992
Number of pages5
JournalJournal of Applied Physics
Volume85
Issue number8 I
StatePublished - Apr 15 1999
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Investigation of optically active defect clusters in KH<sub>2</sub>PO<sub>4</sub> under laser photoexcitation'. Together they form a unique fingerprint.

  • Cite this

    Demos, S. G., Staggs, M., Yan, M., Radousky, H. B., & De Yoreo, J. J. (1999). Investigation of optically active defect clusters in KH2PO4 under laser photoexcitation. Journal of Applied Physics, 85(8 I), 3988-3992.