Investigation of optically active defect clusters in KH2PO4 under laser photoexcitation

S. G. Demos; M. Staggs; M. Yan; H. B. Radousky; J. J. De Yoreo

Investigation of optically active defect clusters in KH₂PO₄ under laser photoexcitation

S. G. Demos, M. Staggs, M. Yan, H. B. Radousky, J. J. De Yoreo

Research output: Contribution to journal › Article › peer-review

Abstract

Photoexcited defect clusters in the bulk of KH₂PO₄ crystals are investigated using a microscopic fluorescence imaging system with 1 μm spatial resolution. The observed defect cluster concentration is approximately 10⁴-10⁶ per mm³ depending on the crystal growth method and sector of the crystal. The intensity of the emission clusters varies widely within the image field while a nearly uniformly distributed background is present. Spectroscopic measurements provided information on the emission characteristics of the observed defect population.

Original language	English (US)
Pages (from-to)	3988-3992
Number of pages	5
Journal	Journal of Applied Physics
Volume	85
Issue number	8 I
State	Published - Apr 15 1999
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)
Physics and Astronomy (miscellaneous)

Cite this

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title = "Investigation of optically active defect clusters in KH2PO4 under laser photoexcitation",

abstract = "Photoexcited defect clusters in the bulk of KH2PO4 crystals are investigated using a microscopic fluorescence imaging system with 1 μm spatial resolution. The observed defect cluster concentration is approximately 104-106 per mm3 depending on the crystal growth method and sector of the crystal. The intensity of the emission clusters varies widely within the image field while a nearly uniformly distributed background is present. Spectroscopic measurements provided information on the emission characteristics of the observed defect population.",

author = "Demos, {S. G.} and M. Staggs and M. Yan and Radousky, {H. B.} and {De Yoreo}, {J. J.}",

year = "1999",

month = apr,

day = "15",

language = "English (US)",

volume = "85",

pages = "3988--3992",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

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TY - JOUR

T1 - Investigation of optically active defect clusters in KH2PO4 under laser photoexcitation

AU - Demos, S. G.

AU - Staggs, M.

AU - Yan, M.

AU - Radousky, H. B.

AU - De Yoreo, J. J.

PY - 1999/4/15

Y1 - 1999/4/15

N2 - Photoexcited defect clusters in the bulk of KH2PO4 crystals are investigated using a microscopic fluorescence imaging system with 1 μm spatial resolution. The observed defect cluster concentration is approximately 104-106 per mm3 depending on the crystal growth method and sector of the crystal. The intensity of the emission clusters varies widely within the image field while a nearly uniformly distributed background is present. Spectroscopic measurements provided information on the emission characteristics of the observed defect population.

AB - Photoexcited defect clusters in the bulk of KH2PO4 crystals are investigated using a microscopic fluorescence imaging system with 1 μm spatial resolution. The observed defect cluster concentration is approximately 104-106 per mm3 depending on the crystal growth method and sector of the crystal. The intensity of the emission clusters varies widely within the image field while a nearly uniformly distributed background is present. Spectroscopic measurements provided information on the emission characteristics of the observed defect population.

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M3 - Article

AN - SCOPUS:0012460966

VL - 85

SP - 3988

EP - 3992

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 8 I

ER -

Investigation of optically active defect clusters in KH₂PO₄ under laser photoexcitation

Abstract

ASJC Scopus subject areas

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