Abstract
Photoexcited defect clusters in the bulk of KH2PO4 crystals are investigated using a microscopic fluorescence imaging system with 1 μm spatial resolution. The observed defect cluster concentration is approximately 104-106 per mm3 depending on the crystal growth method and sector of the crystal. The intensity of the emission clusters varies widely within the image field while a nearly uniformly distributed background is present. Spectroscopic measurements provided information on the emission characteristics of the observed defect population.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 3988-3992 |
| Number of pages | 5 |
| Journal | Journal of Applied Physics |
| Volume | 85 |
| Issue number | 8 I |
| State | Published - Apr 15 1999 |
| Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy(all)
- Physics and Astronomy (miscellaneous)
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Demos, S. G., Staggs, M., Yan, M., Radousky, H. B., & De Yoreo, J. J. (1999). Investigation of optically active defect clusters in KH2PO4 under laser photoexcitation. Journal of Applied Physics, 85(8 I), 3988-3992.