Imaging of laser-induced reactions of individual defect nanoclusters

S. G. Demos; M. Staggs; J. J. De Yoreo; H. B. Radousky

Imaging of laser-induced reactions of individual defect nanoclusters

S. G. Demos, M. Staggs, J. J. De Yoreo, H. B. Radousky

Research output: Contribution to journal › Article › peer-review

Abstract

The response of individual defect nanoclusters located in the bulk of a dielectric material following exposure to 355-nm, 3-ns high-power laser irradiation is investigated by use of microscopic fluorescence imaging. Experiments were carried out on KH₂PO₄ crystals. We provide direct imaging of the reaction to an external stimulus of individual defect clusters and demonstrate a novel method of studying the dynamic behavior of bulk defects.

Original language	English (US)
Pages (from-to)	1975-1977
Number of pages	3
Journal	Optics Letters
Volume	26
Issue number	24
State	Published - Dec 15 2001
Externally published	Yes

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics

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title = "Imaging of laser-induced reactions of individual defect nanoclusters",

abstract = "The response of individual defect nanoclusters located in the bulk of a dielectric material following exposure to 355-nm, 3-ns high-power laser irradiation is investigated by use of microscopic fluorescence imaging. Experiments were carried out on KH2PO4 crystals. We provide direct imaging of the reaction to an external stimulus of individual defect clusters and demonstrate a novel method of studying the dynamic behavior of bulk defects.",

author = "Demos, {S. G.} and M. Staggs and {De Yoreo}, {J. J.} and Radousky, {H. B.}",

year = "2001",

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language = "English (US)",

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AU - Staggs, M.

AU - De Yoreo, J. J.

AU - Radousky, H. B.

PY - 2001/12/15

Y1 - 2001/12/15

N2 - The response of individual defect nanoclusters located in the bulk of a dielectric material following exposure to 355-nm, 3-ns high-power laser irradiation is investigated by use of microscopic fluorescence imaging. Experiments were carried out on KH2PO4 crystals. We provide direct imaging of the reaction to an external stimulus of individual defect clusters and demonstrate a novel method of studying the dynamic behavior of bulk defects.

AB - The response of individual defect nanoclusters located in the bulk of a dielectric material following exposure to 355-nm, 3-ns high-power laser irradiation is investigated by use of microscopic fluorescence imaging. Experiments were carried out on KH2PO4 crystals. We provide direct imaging of the reaction to an external stimulus of individual defect clusters and demonstrate a novel method of studying the dynamic behavior of bulk defects.

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