Abstract
High gain, high voltage, photoconductive switches using Si and GaAs have been studied for at least the last two decades. A laser is used to generate charge carriers within the material to render the device conductive. In this mode, once triggered, the device will not transition back to an off state until the conduction current drops below a threshold. Semi-insulating silicon carbide has high breakdown strength (>250 kV/mm) and is relatively transparent to below bandgap light. This material appears to operate in a non-high gain mode and the on resistance of the bulk can be controlled directly with the laser intensity over many orders of magnitude. It is presently believed that the conduction mechanism may be due to (a) excitation of deep states or (b) multi-photon pumping of carriers from the valance band. We present the study of the physics processes and development of a device operating at >20-kV.
| Original language | English (US) |
|---|---|
| Title of host publication | Materials Science Forum |
| Publisher | Trans Tech Publications Ltd |
| Pages | 871-874 |
| Number of pages | 4 |
| Volume | 821-823 |
| ISBN (Print) | 9783038354789 |
| DOIs | |
| State | Published - 2015 |
| Externally published | Yes |
| Event | European Conference on Silicon Carbide and Related Materials, ECSCRM 2014 - Grenoble, France Duration: Sep 21 2014 → Sep 25 2014 |
Publication series
| Name | Materials Science Forum |
|---|---|
| Volume | 821-823 |
| ISSN (Print) | 02555476 |
Other
| Other | European Conference on Silicon Carbide and Related Materials, ECSCRM 2014 |
|---|---|
| Country | France |
| City | Grenoble |
| Period | 9/21/14 → 9/25/14 |
Fingerprint
Keywords
- 20 kV
- Active switch
- High–voltage
- Inverter
- Photoconductive switch
- Transmission
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanical Engineering
- Mechanics of Materials
Cite this
High voltage wide bandgap photoconductive switching. / Sampayan, S. E.; Bora, M.; Brooksby, C.; Caporaso, George J; Conway, A.; Hawkins, S.; Hickman, B.; Holmes, C.; Nguyen, H.; Nikolic, R.; Palmer, D.; Voss, L.; Wang, L.; Waters, A.
Materials Science Forum. Vol. 821-823 Trans Tech Publications Ltd, 2015. p. 871-874 (Materials Science Forum; Vol. 821-823).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - High voltage wide bandgap photoconductive switching
AU - Sampayan, S. E.
AU - Bora, M.
AU - Brooksby, C.
AU - Caporaso, George J
AU - Conway, A.
AU - Hawkins, S.
AU - Hickman, B.
AU - Holmes, C.
AU - Nguyen, H.
AU - Nikolic, R.
AU - Palmer, D.
AU - Voss, L.
AU - Wang, L.
AU - Waters, A.
PY - 2015
Y1 - 2015
N2 - High gain, high voltage, photoconductive switches using Si and GaAs have been studied for at least the last two decades. A laser is used to generate charge carriers within the material to render the device conductive. In this mode, once triggered, the device will not transition back to an off state until the conduction current drops below a threshold. Semi-insulating silicon carbide has high breakdown strength (>250 kV/mm) and is relatively transparent to below bandgap light. This material appears to operate in a non-high gain mode and the on resistance of the bulk can be controlled directly with the laser intensity over many orders of magnitude. It is presently believed that the conduction mechanism may be due to (a) excitation of deep states or (b) multi-photon pumping of carriers from the valance band. We present the study of the physics processes and development of a device operating at >20-kV.
AB - High gain, high voltage, photoconductive switches using Si and GaAs have been studied for at least the last two decades. A laser is used to generate charge carriers within the material to render the device conductive. In this mode, once triggered, the device will not transition back to an off state until the conduction current drops below a threshold. Semi-insulating silicon carbide has high breakdown strength (>250 kV/mm) and is relatively transparent to below bandgap light. This material appears to operate in a non-high gain mode and the on resistance of the bulk can be controlled directly with the laser intensity over many orders of magnitude. It is presently believed that the conduction mechanism may be due to (a) excitation of deep states or (b) multi-photon pumping of carriers from the valance band. We present the study of the physics processes and development of a device operating at >20-kV.
KW - 20 kV
KW - Active switch
KW - High–voltage
KW - Inverter
KW - Photoconductive switch
KW - Transmission
UR - http://www.scopus.com/inward/record.url?scp=84950341508&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84950341508&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/MSF.821-823.871
DO - 10.4028/www.scientific.net/MSF.821-823.871
M3 - Conference contribution
AN - SCOPUS:84950341508
SN - 9783038354789
VL - 821-823
T3 - Materials Science Forum
SP - 871
EP - 874
BT - Materials Science Forum
PB - Trans Tech Publications Ltd
ER -