High thermoelectric efficiency in lanthanum doped Yb14 Mn Sb11

Eric S. Toberer, Shawna R. Brown, Teruyuki Ikeda, Susan M. Kauzlarich, G. Jeffrey Snyder

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Lanthanum doping of the high-temperature p -type thermoelectric material Yb14 Mn Sb11 enhances the figure of merit (zT) through carrier concentration tuning. This is achieved by substituting La3+ on the Yb2+ site to reduce the free hole concentration as expected from the change in valence. The high-temperature transport properties (Seebeck coefficient, electrical resistivity, Hall mobility, and thermal conductivity) of Yb13.6 La0.4 Mn Sb11 are explained by the change in carrier concentration using a simple rigid parabolic band model, similar to that found in Yb14 Mn1-x Alx Sb11. Together, use of these two dopant sites enables the partial decoupling of electronic and structural properties in Yb14 Mn Sb11 -based materials.

Original languageEnglish (US)
Article number062110
JournalApplied Physics Letters
Issue number6
StatePublished - 2008

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Toberer, E. S., Brown, S. R., Ikeda, T., Kauzlarich, S. M., & Snyder, G. J. (2008). High thermoelectric efficiency in lanthanum doped Yb14 Mn Sb11. Applied Physics Letters, 93(6), [062110]. https://doi.org/10.1063/1.2970089