Helical motion of an S4 voltage sensor revealed by gating pore currents

William A. Catterall, Vladimir Yarov-Yarovoy

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The mechanism by which the voltage sensors of voltage-gated ion channels move gating charge during the activation process is a subject of active debate. In this issue of Channels, Gamal El-Din et al.1 probe the movements of the S4 voltage sensor of Shaker K+ channels through clever use of omega gating pore currents generated by paired gating-charge mutations. Their results provide strong support for a sliding helix or helical screw mechanism of gating charge movement.

Original languageEnglish (US)
Pages (from-to)75-77
Number of pages3
JournalChannels
Volume4
Issue number2
DOIs
StatePublished - 2010
Externally publishedYes

Fingerprint

Ion Channel Gating
Mutation
Sensors
Electric potential
Ion Channels
Chemical activation

Keywords

  • Gating pore current
  • Ion channel
  • Potassium channel
  • Sodium channel

ASJC Scopus subject areas

  • Biophysics
  • Biochemistry
  • Medicine(all)

Cite this

Helical motion of an S4 voltage sensor revealed by gating pore currents. / Catterall, William A.; Yarov-Yarovoy, Vladimir.

In: Channels, Vol. 4, No. 2, 2010, p. 75-77.

Research output: Contribution to journalArticle

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