Fabrication of ZnO nanowires by vapor-phase deposition and their field emission properties

Qifeng Zhang, Yi Rong, Xianxiang Chen, Gengmin Zhang, Zhaoxiang Zhang, Zengquan Xue, Changqi Chen, Jinlei Wu

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Unoriented ZnO nanowires are fabricated either on the surface of silicon wafer or at the tip of needle-like tungsten by vapor-phase deposition. Both the plane field emission and tip field emission of ZnO nanowires are studied using a field emission microscope. The results show that for unoriented ZnO nanowire thin films, the electric field intensities corresponding to the turn-on voltage and threshold voltage of field emission are 4.7 and 7.6 V/μm, which are much lower than those of aligned nanowire arrays. The enhancement of the field emission ability is attributed to the fact that the field-induced screening effect can be effectively avoided due to the widely spaced intervals that exist between the unoriented nanowires. The field emission of the tungsten tip also can be effectively improved by assembling ZnO nanowires on the tip, which presents a potential application of ZnO nanowire on the probe of electron microscopes with ultrahigh resolution.

Original languageEnglish (US)
Pages (from-to)1225-1229
Number of pages5
JournalPan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Volume27
Issue number7
StatePublished - Jul 1 2006
Externally publishedYes

Fingerprint

Field emission
Nanowires
field emission
nanowires
Vapors
vapor phases
Fabrication
fabrication
Tungsten
tungsten
Field emission microscopes
electric potential
assembling
Silicon wafers
Threshold voltage
needles
Needles
threshold voltage
Screening
Electron microscopes

Keywords

  • Field emission
  • Nanowire
  • Vapor-phase deposition
  • ZnO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Fabrication of ZnO nanowires by vapor-phase deposition and their field emission properties. / Zhang, Qifeng; Rong, Yi; Chen, Xianxiang; Zhang, Gengmin; Zhang, Zhaoxiang; Xue, Zengquan; Chen, Changqi; Wu, Jinlei.

In: Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, Vol. 27, No. 7, 01.07.2006, p. 1225-1229.

Research output: Contribution to journalArticle

Zhang, Q, Rong, Y, Chen, X, Zhang, G, Zhang, Z, Xue, Z, Chen, C & Wu, J 2006, 'Fabrication of ZnO nanowires by vapor-phase deposition and their field emission properties', Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, vol. 27, no. 7, pp. 1225-1229.
Zhang, Qifeng ; Rong, Yi ; Chen, Xianxiang ; Zhang, Gengmin ; Zhang, Zhaoxiang ; Xue, Zengquan ; Chen, Changqi ; Wu, Jinlei. / Fabrication of ZnO nanowires by vapor-phase deposition and their field emission properties. In: Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors. 2006 ; Vol. 27, No. 7. pp. 1225-1229.
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