Abstract
Unoriented ZnO nanowires are fabricated either on the surface of silicon wafer or at the tip of needle-like tungsten by vapor-phase deposition. Both the plane field emission and tip field emission of ZnO nanowires are studied using a field emission microscope. The results show that for unoriented ZnO nanowire thin films, the electric field intensities corresponding to the turn-on voltage and threshold voltage of field emission are 4.7 and 7.6 V/μm, which are much lower than those of aligned nanowire arrays. The enhancement of the field emission ability is attributed to the fact that the field-induced screening effect can be effectively avoided due to the widely spaced intervals that exist between the unoriented nanowires. The field emission of the tungsten tip also can be effectively improved by assembling ZnO nanowires on the tip, which presents a potential application of ZnO nanowire on the probe of electron microscopes with ultrahigh resolution.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 1225-1229 |
| Number of pages | 5 |
| Journal | Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors |
| Volume | 27 |
| Issue number | 7 |
| State | Published - Jul 1 2006 |
| Externally published | Yes |
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Keywords
- Field emission
- Nanowire
- Vapor-phase deposition
- ZnO
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
Cite this
Fabrication of ZnO nanowires by vapor-phase deposition and their field emission properties. / Zhang, Qifeng; Rong, Yi; Chen, Xianxiang; Zhang, Gengmin; Zhang, Zhaoxiang; Xue, Zengquan; Chen, Changqi; Wu, Jinlei.
In: Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, Vol. 27, No. 7, 01.07.2006, p. 1225-1229.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Fabrication of ZnO nanowires by vapor-phase deposition and their field emission properties
AU - Zhang, Qifeng
AU - Rong, Yi
AU - Chen, Xianxiang
AU - Zhang, Gengmin
AU - Zhang, Zhaoxiang
AU - Xue, Zengquan
AU - Chen, Changqi
AU - Wu, Jinlei
PY - 2006/7/1
Y1 - 2006/7/1
N2 - Unoriented ZnO nanowires are fabricated either on the surface of silicon wafer or at the tip of needle-like tungsten by vapor-phase deposition. Both the plane field emission and tip field emission of ZnO nanowires are studied using a field emission microscope. The results show that for unoriented ZnO nanowire thin films, the electric field intensities corresponding to the turn-on voltage and threshold voltage of field emission are 4.7 and 7.6 V/μm, which are much lower than those of aligned nanowire arrays. The enhancement of the field emission ability is attributed to the fact that the field-induced screening effect can be effectively avoided due to the widely spaced intervals that exist between the unoriented nanowires. The field emission of the tungsten tip also can be effectively improved by assembling ZnO nanowires on the tip, which presents a potential application of ZnO nanowire on the probe of electron microscopes with ultrahigh resolution.
AB - Unoriented ZnO nanowires are fabricated either on the surface of silicon wafer or at the tip of needle-like tungsten by vapor-phase deposition. Both the plane field emission and tip field emission of ZnO nanowires are studied using a field emission microscope. The results show that for unoriented ZnO nanowire thin films, the electric field intensities corresponding to the turn-on voltage and threshold voltage of field emission are 4.7 and 7.6 V/μm, which are much lower than those of aligned nanowire arrays. The enhancement of the field emission ability is attributed to the fact that the field-induced screening effect can be effectively avoided due to the widely spaced intervals that exist between the unoriented nanowires. The field emission of the tungsten tip also can be effectively improved by assembling ZnO nanowires on the tip, which presents a potential application of ZnO nanowire on the probe of electron microscopes with ultrahigh resolution.
KW - Field emission
KW - Nanowire
KW - Vapor-phase deposition
KW - ZnO
UR - http://www.scopus.com/inward/record.url?scp=33748149084&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33748149084&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:33748149084
VL - 27
SP - 1225
EP - 1229
JO - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
JF - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
SN - 0253-4177
IS - 7
ER -