Fabrication and modeling of silicon-embedded high-Q inductors

Tingrui Pan, Antonio Baldi, Emile Davies-Venn, Rhonda F. Drayton, Babak Ziaie

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

In this paper, we report on the fabrication and modeling of a CMOS-compatible silicon-embedded high-Q integrated inductor (μH range). The fabrication process is based on DRIE, pulse-reverse super-conformal electroplating of copper and chemical-mechanical polishing. A lumped-element equivalent circuit model based on electromagnetic finite-element simulations for the determination of the element values was also developed. Inductors with different geometric design parameters were simulated to show the optimization possibility using the model. A Q-factor of over 60 (at 30-40 MHz) for a 2 μH inductor was measured, which is the highest reported in the literature for integrated inductors at such frequencies. The measurement results closely match the simulations from the lumped circuit model.

Original languageEnglish (US)
Pages (from-to)849-854
Number of pages6
JournalJournal of Micromechanics and Microengineering
Volume15
Issue number4
DOIs
StatePublished - Apr 1 2005
Externally publishedYes

Fingerprint

Silicon
Fabrication
Chemical mechanical polishing
Electroplating
Equivalent circuits
Copper
Networks (circuits)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Cite this

Fabrication and modeling of silicon-embedded high-Q inductors. / Pan, Tingrui; Baldi, Antonio; Davies-Venn, Emile; Drayton, Rhonda F.; Ziaie, Babak.

In: Journal of Micromechanics and Microengineering, Vol. 15, No. 4, 01.04.2005, p. 849-854.

Research output: Contribution to journalArticle

Pan, Tingrui ; Baldi, Antonio ; Davies-Venn, Emile ; Drayton, Rhonda F. ; Ziaie, Babak. / Fabrication and modeling of silicon-embedded high-Q inductors. In: Journal of Micromechanics and Microengineering. 2005 ; Vol. 15, No. 4. pp. 849-854.
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