Abstract
Single-crystalline samples of a new Zintl compound, Eu 3Ga 2P 4, have been synthesized by a Ga-flux method. Eu 3Ga 2P 4 is found to crystallize in a monoclinic unit cell, space group C2/c, isostructural to Ca 3Al 2As 4. The structure is composed of a pair of edge-shared GaP 4 tetrahedra, which link by corner-sharing to form Ga 2P 4 two-dimensional layers, separated by Eu 2+ ions. Magnetic susceptibility showed a Curie-Weiss behavior with an effective magnetic moment consistent with the value for Eu 2+ magnetic ions. Below 15 K, ferromagnetic ordering was observed and the saturation magnetic moment was 6.6 μ B. Electrical resistivity measurements on a single crystal showed semiconducting behavior. Resistivity in the temperature range between 280 and 300 K was fit by an activation model with an energy gap of 0.552(2) eV. The temperature dependence of the resistivity is better described by the variable-range-hopping model for a three-dimensional conductivity, suggesting that Eu-P bonds are involved in the conductivity. A large magnetoresistance, up to -30%, is observed with a magnetic field H = 2 T at T = 100 K, suggesting strong coupling of carriers with the Eu 2+ magnetic moment.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 2860-2866 |
| Number of pages | 7 |
| Journal | Inorganic Chemistry |
| Volume | 51 |
| Issue number | 5 |
| DOIs | |
| State | Published - Mar 5 2012 |
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ASJC Scopus subject areas
- Inorganic Chemistry
- Physical and Theoretical Chemistry
Cite this
Crystal structure and a giant magnetoresistance effect in the new zintl compound Eu 3Ga 2P 4 . / Tsujii, Naohito; Uvarov, Catherine A.; Klavins, Peter; Yi, Tanghong; Kauzlarich, Susan M.
In: Inorganic Chemistry, Vol. 51, No. 5, 05.03.2012, p. 2860-2866.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Crystal structure and a giant magnetoresistance effect in the new zintl compound Eu 3Ga 2P 4
AU - Tsujii, Naohito
AU - Uvarov, Catherine A.
AU - Klavins, Peter
AU - Yi, Tanghong
AU - Kauzlarich, Susan M.
PY - 2012/3/5
Y1 - 2012/3/5
N2 - Single-crystalline samples of a new Zintl compound, Eu 3Ga 2P 4, have been synthesized by a Ga-flux method. Eu 3Ga 2P 4 is found to crystallize in a monoclinic unit cell, space group C2/c, isostructural to Ca 3Al 2As 4. The structure is composed of a pair of edge-shared GaP 4 tetrahedra, which link by corner-sharing to form Ga 2P 4 two-dimensional layers, separated by Eu 2+ ions. Magnetic susceptibility showed a Curie-Weiss behavior with an effective magnetic moment consistent with the value for Eu 2+ magnetic ions. Below 15 K, ferromagnetic ordering was observed and the saturation magnetic moment was 6.6 μ B. Electrical resistivity measurements on a single crystal showed semiconducting behavior. Resistivity in the temperature range between 280 and 300 K was fit by an activation model with an energy gap of 0.552(2) eV. The temperature dependence of the resistivity is better described by the variable-range-hopping model for a three-dimensional conductivity, suggesting that Eu-P bonds are involved in the conductivity. A large magnetoresistance, up to -30%, is observed with a magnetic field H = 2 T at T = 100 K, suggesting strong coupling of carriers with the Eu 2+ magnetic moment.
AB - Single-crystalline samples of a new Zintl compound, Eu 3Ga 2P 4, have been synthesized by a Ga-flux method. Eu 3Ga 2P 4 is found to crystallize in a monoclinic unit cell, space group C2/c, isostructural to Ca 3Al 2As 4. The structure is composed of a pair of edge-shared GaP 4 tetrahedra, which link by corner-sharing to form Ga 2P 4 two-dimensional layers, separated by Eu 2+ ions. Magnetic susceptibility showed a Curie-Weiss behavior with an effective magnetic moment consistent with the value for Eu 2+ magnetic ions. Below 15 K, ferromagnetic ordering was observed and the saturation magnetic moment was 6.6 μ B. Electrical resistivity measurements on a single crystal showed semiconducting behavior. Resistivity in the temperature range between 280 and 300 K was fit by an activation model with an energy gap of 0.552(2) eV. The temperature dependence of the resistivity is better described by the variable-range-hopping model for a three-dimensional conductivity, suggesting that Eu-P bonds are involved in the conductivity. A large magnetoresistance, up to -30%, is observed with a magnetic field H = 2 T at T = 100 K, suggesting strong coupling of carriers with the Eu 2+ magnetic moment.
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U2 - 10.1021/ic202018r
DO - 10.1021/ic202018r
M3 - Article
C2 - 22339060
AN - SCOPUS:84857867790
VL - 51
SP - 2860
EP - 2866
JO - Inorganic Chemistry
JF - Inorganic Chemistry
SN - 0020-1669
IS - 5
ER -