Bismuth Doping of Germanium Nanocrystals through Colloidal Chemistry

Katayoun Tabatabaei, Haipeng Lu, Bradley M. Nolan, Xi Cen, Cliff E. McCold, Xinming Zhang, Richard L. Brutchey, Klaus Van Benthem, Joshua Hihath, Susan M. Kauzlarich

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

Nanogermanium is a material that has great potential for technological applications, and doped and alloyed Ge nanocrystals (NCs) are actively being considered. New alloys and compositions are possible in colloidal synthesis because the reactions are kinetically rather than thermodynamically controlled. Most of the Group V elements have been shown to be n-type dopants in Ge to increase carrier concentration; however, thermodynamically, Bi shows no solubility in crystalline Ge. Bi-doped Ge NCs were synthesized for the first time in a microwave-assisted solution route. The oleylamine capping ligand can be replaced by dodecanethiol without loss of Bi. A positive correlation between the lattice parameter and the concentration of Bi content (0.5-2.0 mol %) is shown via powder X-ray diffraction and selected area electron diffraction. X-ray photoelectron spectroscopy, transmission electron microscopy (TEM), scanning TEM, and inductively coupled plasma-mass spectroscopy are consistent with the Bi solubility up to 2 mol %. The NC size increases with increasing amount of bismuth iodide employed in the reaction. Absorption data show that the band gap of the Bi-doped Ge NCs is consistent with the NC size. This work shows that a new element can be doped into Ge NCs via a microwave-assisted route in amounts as high as 1-2 mol %, which leads to increased carriers. Colloidal chemistry provides an inroad to new materials not accessible via other means.

Original languageEnglish (US)
Pages (from-to)7353-7363
Number of pages11
JournalChemistry of Materials
Volume29
Issue number17
DOIs
StatePublished - Sep 12 2017

Fingerprint

Germanium
Bismuth
Nanocrystals
Doping (additives)
Solubility
Microwaves
Transmission electron microscopy
Inductively coupled plasma
Electron diffraction
Chemical elements
X ray powder diffraction
Lattice constants
Carrier concentration
Energy gap
X ray photoelectron spectroscopy
Ligands
Spectroscopy
Crystalline materials
Scanning electron microscopy
Chemical analysis

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)
  • Materials Chemistry

Cite this

Tabatabaei, K., Lu, H., Nolan, B. M., Cen, X., McCold, C. E., Zhang, X., ... Kauzlarich, S. M. (2017). Bismuth Doping of Germanium Nanocrystals through Colloidal Chemistry. Chemistry of Materials, 29(17), 7353-7363. https://doi.org/10.1021/acs.chemmater.7b02241

Bismuth Doping of Germanium Nanocrystals through Colloidal Chemistry. / Tabatabaei, Katayoun; Lu, Haipeng; Nolan, Bradley M.; Cen, Xi; McCold, Cliff E.; Zhang, Xinming; Brutchey, Richard L.; Van Benthem, Klaus; Hihath, Joshua; Kauzlarich, Susan M.

In: Chemistry of Materials, Vol. 29, No. 17, 12.09.2017, p. 7353-7363.

Research output: Contribution to journalArticle

Tabatabaei, K, Lu, H, Nolan, BM, Cen, X, McCold, CE, Zhang, X, Brutchey, RL, Van Benthem, K, Hihath, J & Kauzlarich, SM 2017, 'Bismuth Doping of Germanium Nanocrystals through Colloidal Chemistry', Chemistry of Materials, vol. 29, no. 17, pp. 7353-7363. https://doi.org/10.1021/acs.chemmater.7b02241
Tabatabaei K, Lu H, Nolan BM, Cen X, McCold CE, Zhang X et al. Bismuth Doping of Germanium Nanocrystals through Colloidal Chemistry. Chemistry of Materials. 2017 Sep 12;29(17):7353-7363. https://doi.org/10.1021/acs.chemmater.7b02241
Tabatabaei, Katayoun ; Lu, Haipeng ; Nolan, Bradley M. ; Cen, Xi ; McCold, Cliff E. ; Zhang, Xinming ; Brutchey, Richard L. ; Van Benthem, Klaus ; Hihath, Joshua ; Kauzlarich, Susan M. / Bismuth Doping of Germanium Nanocrystals through Colloidal Chemistry. In: Chemistry of Materials. 2017 ; Vol. 29, No. 17. pp. 7353-7363.
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