Atmospheric pressure chemical vapor deposition of titanium aluminum nitride films

Joseph T. Scheper, Kapila Wadu Mesthrige, James W. Proscia, Gang-yu Liu, Charles H. Winter

Research output: Contribution to journalArticle

14 Scopus citations

Abstract

The atmospheric pressure chemical vapor deposition of titanium aluminum nitride films was accomplished using a three-precursor system comprised of titanium tetrachloride, tert-butylamine, and trimethylaluminum at a substrate temperature of 600 °C. Smooth, specular, and highly adherent violet-black films were obtained. The aluminum content of the films varied with trimethylaluminum flow rate up to a maximum aluminum/titanium ratio of about 1:1. Higher aluminum flow rates afforded rough, poorly adherent coatings. Films having the compositions Ti0.83Al0.17N0.89, Ti0.69Al0.31N0.85, and Ti0.52Al0.48N1.38 were analyzed in detail. The films were characterized by X-ray powder diffraction, X-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, scanning electron microscopy, atomic force microscopy, and resistivity measurements. The films were subjected to nanoindentation hardness testing and high-temperature oxidation studies. The T1-xAlxN films were found to be harder and more resistant to oxidation by ambient atmosphere than TiN films deposited from titanium tetrachloride and tert-butylamine at 600 °C. The dependence of the film properties on the aluminum content is discussed.

Original languageEnglish (US)
Pages (from-to)3490-3496
Number of pages7
JournalChemistry of Materials
Volume11
Issue number12
StatePublished - 1999
Externally publishedYes

ASJC Scopus subject areas

  • Materials Chemistry
  • Materials Science(all)

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    Scheper, J. T., Mesthrige, K. W., Proscia, J. W., Liu, G., & Winter, C. H. (1999). Atmospheric pressure chemical vapor deposition of titanium aluminum nitride films. Chemistry of Materials, 11(12), 3490-3496.