An expedited approach to evaluate the importance of different crystal growth parameters on laser damage performance in KDP and DKDP

R. A. Negres, N. P. Zaitseva, P. Demange, S. G. Demos

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations

Abstract

We investigate the laser-induced damage resistance at 355 nm in DKDP crystals grown with varying growth parameters, including temperature, speed of growth and impurity concentration. In order to perform this work, a DKDP crystal was grown over 34 days by the rapid-growth technique with varied growth conditions. By using the same crystal, we are able to isolate growth-related parameters affecting LID from raw material or other variations that are encountered when testing in different crystals. The objective is to find correlations of damage performance to growth conditions and reveal the key parameters for achieving DKDP material in which the number of damage initiating defects is minimized.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Volume6403
DOIs
StatePublished - 2007
Externally publishedYes
Event37th Annual Boulder Damage Symposium - Laser-Induced Damage in Optical Materials: 2006 - Boulder, CO, United States
Duration: Sep 25 2006Sep 27 2006

Other

Other37th Annual Boulder Damage Symposium - Laser-Induced Damage in Optical Materials: 2006
CountryUnited States
CityBoulder, CO
Period9/25/069/27/06

Keywords

  • Crystal growth
  • KDP and DKDP crystals
  • Laser-induced damage

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

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    Negres, R. A., Zaitseva, N. P., Demange, P., & Demos, S. G. (2007). An expedited approach to evaluate the importance of different crystal growth parameters on laser damage performance in KDP and DKDP. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 6403). [64031S] https://doi.org/10.1117/12.695473