Abstract
We investigate the laser-induced damage resistance at 355 nm in DKDP crystals grown with varying growth parameters, including temperature, speed of growth and impurity concentration. In order to perform this work, a DKDP crystal was grown over 34 days by the rapid-growth technique with varied growth conditions. By using the same crystal, we are able to isolate growth-related parameters affecting LID from raw material or other variations that are encountered when testing in different crystals. The objective is to find correlations of damage performance to growth conditions and reveal the key parameters for achieving DKDP material in which the number of damage initiating defects is minimized.
Original language | English (US) |
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Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 6403 |
DOIs | |
State | Published - 2007 |
Externally published | Yes |
Event | 37th Annual Boulder Damage Symposium - Laser-Induced Damage in Optical Materials: 2006 - Boulder, CO, United States Duration: Sep 25 2006 → Sep 27 2006 |
Other
Other | 37th Annual Boulder Damage Symposium - Laser-Induced Damage in Optical Materials: 2006 |
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Country/Territory | United States |
City | Boulder, CO |
Period | 9/25/06 → 9/27/06 |
Keywords
- Crystal growth
- KDP and DKDP crystals
- Laser-induced damage
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics