A model for assessing occupational exposure to extremely low-frequency magnetic fields in fabrication rooms in the semiconductor health study

S. Abdollahzadeh, S. K. Hammond, Marc B Schenker

Research output: Contribution to journalArticle

13 Scopus citations

Abstract

A model was created to assess occupational exposure to extremely low- frequency magnetic fields (ELF-MF) among semiconductor fabrication-room (fab) workers. This model was based on the assumption that each subject's exposure arose from being near identifiable ELF-MF sources or being in areas with high ELF-MF levels. To assess ELF-MF exposures, the model superimposed subjects' time-activity patterns (patterns of how and where they spent their time) with measurements of magnetic-field levels from devices and work areas. This model, which was validated by personal dosimetry on 192 persons in three fabs, predicted actual time-weighted average exposures with a correlation coefficient of 0.62. The inability of the model to predict individual exposures more accurately was attributed to unforeseen sources of elevated ELF-MF (transformers, distribution panels, sources in adjacent rooms) or to errors in subjects' judgments of time spent near devices. These unpredictable errors are intrinsic to the method used to estimate exposure.

Original languageEnglish (US)
Pages (from-to)723-734
Number of pages12
JournalAmerican Journal of Industrial Medicine
Volume28
Issue number6
StatePublished - 1995

Keywords

  • electromagnetic fields
  • occupational exposure
  • semiconductor manufacturing

ASJC Scopus subject areas

  • Public Health, Environmental and Occupational Health

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